The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents a W-band LNA implemented in a 90 nm SiGe BiCMOS technology. The LNA achieves a maximum gain of 34 dB and a minimum NF of 3.5 dB at 80 GHz with greater than 25 dB gain and less than 4.5 dB NF over the full W-band. Input and output return losses are greater than 10 dB from 78–149 GHz. The circuit nominally operates from a 1.2 V supply while consuming 15.6 mW of DC power. Due to the...
This paper presents a new communication concept for the passive UHF RFID technology, by means of the exploitation of harmonics signals generated by passive UHF RFID chips. The presence of information carried on the harmonics is experimentally shown by conducted measurements on three different EPC Class-1 Gen2 RFID chips. Therefore, and in compliance with the standard requirements, these results are...
In this paper, a 220–235 GHz single-stage power amplifier (PA) MMIC is presented. The amplifier uses 250 nm InP hetero-junction bipolar transistors (HBTs) and benzocyclobutene (BCB) thin-film microstrip technology. Two levels of power combining were used on-chip to achieve total emitter area of 12 μm2. The first level is a two emitter finger HBT with each finger having emitter area of 0.25×6 μm2....
A dual-resonance mode millimeter-wave VCO with a transformer-coupled resonator in 45nm SOI CMOS is presented that achieves a record tuning range of 88.5% and generates frequencies in 21.1-to-54.5GHz range while consuming only 8-16mW from a 1V supply. Switched capacitor banks and a switched coupled inductor provide coarse tuning, while fine frequency tuning is performed with current-mode tuning. With...
This paper presents a scalable transmit phase array operating at 140 GHz which employs a local PLL reference generation system. Unlike traditional CMOS phase arrays, this enables the array to be formed over multiple chips while avoiding the challenges of distributing mm-wave signals between them. The prototype chip consumes 131 mW of power and occupies 1.95 mm2 of chip area when implemented in 65...
We present a novel, non-contact, on-wafer device characterization method covering both THz (300 GHz–3 THz) and mmW bands (60–300 GHz). Unlike existing contact probes which rely on fragile tips and physical contact with the device on the chip, the new non-contact probe setup is based on radiative coupling of vector network analyzer test ports into the coplanar waveguide environment of monolithic devices...
In this paper, we present a system that allows to realize frequency-division multiplexing multiple-input multiple-output (MIMO) radars which are based on the frequency-modulated continuous-wave (FMCW) principle. Multiple frequency-shifted FMCW signals, which can be separated in the receiver, are used as transmit (TX) signals. The frequency shifting is implemented using digitally generated sinusoids...
A 300-GHz probe-type microstrip-to-waveguide transition in low-temperature co-fired ceramic (LTCC) is presented. A via fence and air holes are used to form a three-dimensional impedance-matching structure and a vertical hollow waveguide inside the multi-layer LTCC substrate. By incorporating the air-hole matching structure beside the microstrip probe, the bandwidth is enhanced. A prototype of the...
A 60-GHz 1.2 V power amplifier (PA) using fully symmetrical 8-way transformer power combiner is designed in 90 nm CMOS. The fully symmetrical transformer power combiner structure mitigates the impedance imbalance caused by uneven voltage coupling between primaries and secondary. At 60 GHz, impedance uniformity between four input ports of the transformer power combiner is better than 5% in real part...
In this paper a two-step transition between a CMOS chip and a WR-10 waveguide is designed and implemented. First, a CPW on Duroid to W-band aluminum waveguide is realized with a bandwidth of 49 % (67–110 GHz), an average insertion loss of −0.35 dB and reflection loss below −10 dB throughout the entire band. Then, wire-bonding the CMOS G-S-G pads to the Duroid CPW introduces an average 0.2 dB loss...
A compact low-temperature co-fired ceramic (LTCC) antenna-in-package (AiP) solution for 60 GHz mobile wireless application is proposed in this paper. To achieve compact size for mobile applications, the end-fire radiation AiP is designed using the Yagi-Uda antenna concept adding image theory and integrated CMOS chip connected wire-bonding. The LTCC AiP module including the CMOS chip has the size of...
This paper studies a novel RFID-enabled strain sensing approach using the radar cross-section measurement technique and taking advantage of the nonlinearity properties of the RFID chip. As a proof of concept, we applied the method for the measurement of an RFID-enabled strain sensor that was realized on fabric using electro-textiles in order to observe large variations of peak-power frequencies and...
A compact ×2 frequency multiplier covering all ku band is implemented in IBM 0.13μm SiGe technology. The transformer coupled circuit uses a common base configuration working in B- class mode and utilizes transmission lines properties to achieve harmonic suppression. The doubler covers a 3dB frequency range between 12.2 GHz to 20.4 GHz with a saturated output power above 9 dBm. The fundamental frequency...
In this letter, we incorporate a compact LC tank, chip resistors and a double-layer frequency selective surface (FSS) to construct a planar dipole antenna for UWB radar and communication systems. Two staircase rectangular antenna arms are isolated with open complementary double concentric split-hexagonal-ring resonators (LC tanks) and chip resistors for bandwidth enhancement. The overall electric...
Transmit and Receive (TX/RX) F-band radar modules are presented. Both modules are implemented in a state of the art SiGe:C BiCMOS featuring high-speed HBTs with fT/fmax of 300/500 GHz. The TX is based on a frequency octupler that consists of a cascade of three Gilbert cells, covering the upper F-band from 120–140 GHz and providing differential output power of up to 6 dBm, the highest values reported...
A compact WR-1.5 (500–750 GHz) low-noise amplifier (LNA) circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 20 nm metamorphic high electron mobility transistors (mHEMTs). The realized six-stage LNA TMIC achieved a maximum gain of 15.4 dB at 576 GHz and more than 10 dB in the frequency range from 555 to 619 GHz. For low-loss packaging of the circuit, a waveguide-to-microstrip...
This paper presents a 60-GHz CMOS artificial magnetic conductor (AMC) on-chip 2×2 monopole - antenna phased array RF receiving system with integrated variable-gain low-noise amplifier (VGLNA) and 360° phase shifter ( PS ). With the AMC structure, the radiation efficiency and power gain of the antenna increases from 6% to 15% and from −9 to −5 dBi at 60 GHz, respectively. In VG-LNA design, variable...
This paper presents a 76- to 81-GHz transceiver chipset implemented in SiGe BiCMOS technology for both long-range and short-range radar applications. A four-channel receiver achieves 11–12 dB noise figure, 16-dB conversion gain, and −2 dBm input compression point. A single-channel transmitter with integrated subharmonic VCO achieves +17 dBm output power and −97 dBc/Hz phase noise at 1-MHz offset referenced...
In this paper a wideband D-Band radar for high precision multi-target vibration measurements is presented. The system is based on a PLL stabilized SiGe MMIC with two VCOs for highly linear fractional-N FMCW sweep generation from 122 to 170 GHz and ≈1ms ramp duration. To demonstrate the capabilities of the FMCW radar, first measurement results are presented. Due to the ultra-wide bandwidth of 48 GHz...
This paper presents the design and characterization of an ultra wideband FMCW radar sensor. The radar frontend consists of transmitter and receiver chips in SiGe BiCMOS technology with on-chip antennas. Both chips share the same reference chirp signal, multiplied 8 times to the desired operation band. The radar frontend demonstrates a bandwidth of 56.8 GHz from 104.4 GHz to 161.2 GHz, which corresponds...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.