The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Two broadband VHF MMIC power amplifiers using GaN HEMT transistors are described in this paper. The first circuit exhibits a PAE ranging from 85% to 51% in the 15MHz – 500MHz bandwidth. The second circuit is a self-biased design and demonstrates a peak PAE of 75% at 100MHz for 13.5W output power in a similar bandwidth. The self biased topology enables a higher bias voltage and therefore higher output...
This report describes a Ku-band amplifier GaN MMIC. The amplifier MMIC delivers a measured saturated power of 20 W and gain of 20 dB under CW operation. To enhance the linearity of the two stage amplifier composed of the MMIC and GaN Internally Matched FET, a diode linearizer has also been built into the MMIC. The linearizer offers 5dB better linear output power, defined the output power at IM3 of...
In this paper, a 220–235 GHz single-stage power amplifier (PA) MMIC is presented. The amplifier uses 250 nm InP hetero-junction bipolar transistors (HBTs) and benzocyclobutene (BCB) thin-film microstrip technology. Two levels of power combining were used on-chip to achieve total emitter area of 12 μm2. The first level is a two emitter finger HBT with each finger having emitter area of 0.25×6 μm2....
In this paper, we report state-of-the-art high frequency performance of a W-band voltage-controlled oscillator (VCO) MMIC realized in a 0.1 µm AlGaN/GaN HEMT technology. The oscillation frequency of the VCO can be tuned between 85.6 and 92.7 GHz, which is a relative tuning bandwidth of 8 %. The achieved maximum output power is as high as 10.6 dBm. The phase noise of the VCO varies from −80.2 to −90...
This paper presents a dielectric-ribbon based data-link which offers both multi-cast network capability (single transmitter broadcasting to multiple receivers) and robustness as it does not rely on electrical contact to support interconnection. The link was developed specifically for aircraft & spacecraft applications where interconnect reliability and lightweight cabling is more critical than...
Bypass low-noise amplifier (LNA) can be used in the base station receiver to improve the dynamic range. It is difficult to achieve both ultra low noise at LNA mode and maintain good linearity at bypass mode simultaneously. In this work, we present the best performance bypass LNA with 0.5 dB of noise figure (NF), 20 dB of gain at 1.95 GHz and high OIP3 of 35 dBm for both LNA and bypass mode. Fabricated...
In this paper a low-power wireless data transmitter MMIC at 113 GHz with data rates up to 25 Gbit/s is presented. The power consumption of the transmitter MMIC is 9.48mW and the output power is about 4.3 dBm. The measured bit error rate is less than 1 × 10−12 for at least up to 13 Gbit/s. The transmitter is a fully integrated MMIC based on a 50nm InGaAs metamorphic HEMT technology. The circuit consists...
This paper reports a new family of GaAs MMICs for E-band communications applications. Both single-ended and balanced versions are reported with minimum output power levels of 26 dBm and 28 dBm respectively for both the 71–76 GHz and the 81–86 GHz. bands. This is 3 dB (2 times) higher than the current state-of-the-art. The single-ended version of the low-band (71–76 GHz) MMIC demonstrated an output...
This work discusses MMICs for the realization of spaceborn multi-Gigabit satellite communication systems. A broadband low-noise amplifier, based on a 50 nm GaAs mHEMT technology, has been developed for Q-band low-noise receivers. The amplifier shows a small-signal gain of 27.5 dB with a gain flatness of ± 1.2 dB and a noise figure below 2 dB over the entire targeted frequency range between 30 and...
Cost effective E-band Low Noise Amplifier (LNA) using a three-dimensional (3-D) MMIC technology and wafer level chip size package (WLCSP) technology is presented. The reflow-soldering compatibility of the technology makes MMIC assembly on PCB very simple and significantly contributes to mass production of receivers and transmitters. The applied 3-D MMIC design effectively shrinks the die sizes. The...
This paper presents measurement results on supply-modulated X-band 0.15µm gate width GaN HEMT MMIC power amplifiers for OFDM signals. Two PAs at 10GHz with 4 and 10W output powers show peak CW efficiencies of 69% and 55%, with gains of 8.5 and 20.4 dB respectively. Supply modulation trajectories are designed by static characterization of each MMIC PA, and the drain modulation is performed though both...
In this work, we report on developments toward ultra-low noise amplifier modules for the WR4 frequency range, covering 170–260 GHz. The amplifiers in question utilize 35 nm HEMT transistors on a 50 µm thick InP substrate, and were developed at NGC. While recent work in this frequency band has demonstrated the usefulness and advanced technology of utilizing integrated waveguide transitions fabricated...
A 50nm MHEMT millimeter-wave MMIC low noise amplifier with state-of-the-art performance is reported. The 3-stage LNA exhibits on-wafer noise figure (NF) as low as 1.6dB with 25dB gain at 80GHz, and also shows unprecedented wideband performance, with 20dB minimum gain across the 30–100GHz band and NF <2.5dB over the 43–90GHz band. An LNA packaged in a WR-12 module has flange NF of 2.0dB over 74–80GHz...
A compact ×2 frequency multiplier covering all ku band is implemented in IBM 0.13μm SiGe technology. The transformer coupled circuit uses a common base configuration working in B- class mode and utilizes transmission lines properties to achieve harmonic suppression. The doubler covers a 3dB frequency range between 12.2 GHz to 20.4 GHz with a saturated output power above 9 dBm. The fundamental frequency...
A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting...
The sub-millimeter wave amplifier MMIC with flip-chip mounting on polyimide substrate has been realized. The thickness of the substrate and the pitch of GND vias are designed to suppress the air radiation from the slot pattern in the substrate. The test results of the micro-strip line formed on the polyimide substrate shows that the design is applicable to the assembly operated up to 320 GHz. The...
In this paper a wideband D-Band radar for high precision multi-target vibration measurements is presented. The system is based on a PLL stabilized SiGe MMIC with two VCOs for highly linear fractional-N FMCW sweep generation from 122 to 170 GHz and ≈1ms ramp duration. To demonstrate the capabilities of the FMCW radar, first measurement results are presented. Due to the ultra-wide bandwidth of 48 GHz...
A five-stage linear low-noise uniform traveling wave amplifier (L2NTWA) design fabricated in an AlGaN/GaN 0.25µm monolithic microwave integrated circuit (MMIC) process is presented. The amplifier exhibits a bandwidth of 10 MHz − 6.5 GHz at a constant gain of 15 dB and a minimum NF of 1.5 dB. For small-signal operation only, an on-chip active cold load (ACL) can be optionally connected by a bond-wire...
A novel 24-GHz MMIC isolator is developed in TSMC 0.18-µm CMOS. A new topology using the nonreciprocal common-source amplifier and the directional coupler is proposed to realize an isolator without ferrite. This isolator achieves 36-dB isolation with 1.8-dB insertion loss. The dc power consumption is only 3.6 mW. The performance of this isolator is comparable to those of the ferrite isolators except...
A 190.8–244GHz solid-state power amplifier MMIC is presented demonstrating 50–80mW Pout at 0.5mW Pin and 1.77W PDC. This represents >20dB of large-signal gain across 53GHz of high-power bandwidth, where PAE is 2.8–4.5%. This 3-stage amplifier has >28dB S21 gain from 207–271GHz, peak 35dB S21 gain at 220GHz, and >30dB S21 gain from 210–238GHz and from 256–268GHz. A power-cascode cell topology...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.