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The design, packaging, and characterization of a 70–95 GHz downconverter with 25 GHz of instantaneous bandwidth is presented. The circuit features a novel LO pass-through feature, making it suitable for integration in two-dimensional focal plane arrays with large-N. The chip has been packaged in a waveguide module and, in the packaged configuration, has a noise temperature below 2000 K (9 dB NF) and...
A single-chip 45 GHz power amplifier implemented in 45nm CMOS SOI is described, which feeds its RF output power to a 2×2 antenna array on an accompanying printed circuit board. The chip results in a maximum RF output power of 28 dBm (630 mW), and the system achieves a peak equivalent isotropic radiated power (EIRP) of 10 Watts (for a 2×2 antenna gain of 12 dB). The power amplifier is composed of 4...
A dual-resonance mode millimeter-wave VCO with a transformer-coupled resonator in 45nm SOI CMOS is presented that achieves a record tuning range of 88.5% and generates frequencies in 21.1-to-54.5GHz range while consuming only 8-16mW from a 1V supply. Switched capacitor banks and a switched coupled inductor provide coarse tuning, while fine frequency tuning is performed with current-mode tuning. With...
This paper presents a new application of absorptive bandstop filter for absorbing the LO-to-RF leakage of mixer in a Q-band heterodyne receiver. The proposed absorptive bandstop filter (ABSF) is achieved by introducing lossy quarter-wavelength resonator to a conventional narrowband bandstop filter. In order to facilitate the receiver system integration, the proposed ABSF is implemented in commercial...
This paper presents a W-band power amplifier (PA) in 45 nm SOI CMOS. The PA incorporates an 8-way zero-degree combiner to efficiently combine 8 parallel PA units, each of which is a 2-stage cascode PA. At 80 GHz, the PA achieves a saturated output power (Psat) of 21.1 dBm, 10.1 dB peak gain, 5.2% peak PAE, and 12 GHz 3-dB bandwidth, and it consumes 1 mm2 of die area. The Psat of 21.1 dBm is the highest...
A new sub-harmonic QPSK architecture is proposed for microwave and millimeter-wave applications including transceiver. The developed 60GHz differential quadrature sub-harmonic QPSK modulator based on the proposed new QPSK architecture can not only reject both the image frequency and LO leakages but also reduce the LO operation frequency to the half of the conventional modulator. Moreover, the proposed...
This paper presents our developed two-chip wireless communication system adhering to the IEEE 802.11ad standards with a baseband IC (BBIC) integrated with a low power 60 GHz transceiver SOC (RFIC) and antennas. The novel low power 60GHz RFIC using a sub-harmonic sliding-IF scheme is fully integrated based on low cost SiGe 0.18 um BiCMOS process. The BBIC uses an adaptive time domain equalizer rather...
Many millimeter wave circuit designers require complex permittivity of low εr film materials with excellent characteristics. However, there are few accuracy measurement methods for film materials in millimeter wave region. In this paper, a high precision measurement method for dielectric film materials in 60GHz band are proposed on the basis of a cavity resonator method. The measured results validate...
In this paper, we present a monolithic wide tuning range low phase noise voltage-controlled oscillator (VCO) with high output power and high efficiency in 90 nm CMOS process. The proposed VCO is based on a cascode amplifier with a π-feedback network. The propose VCO achieves a maximum output power of 10.6 dBm, and a maximum efficiency of 16.1%, when the dc supply voltage is 2.4 V with a current consumption...
Air-filled Substrate Integrated Waveguide (SIW) based on multilayer Printed Circuit Board (PCB) process is proposed in this paper for millimeter-wave applications that require low cost, high performances and compactness. This air-filled SIW allows for substantial loss reduction and power handling enhancement. Its fabrication involves three layers. The top and bottom substrates can consist of a low...
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