The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In semiconductors, the quantum trajectories of electron-hole pairs under strong terahertz fields accumulate Berry phases. For monolayer MoS2 with time-reversal related valleys, the Berry phases appear as the Faraday rotation angles of the emission signal.
A cw triple-wavelength selectable Nd:GdVO4 laser was demonstrated. When switching the dc voltages and applying 25 W pump power, the output wavelength can be selected among 912, 1063, and 1342 nm with watt-level output power.
We report a unique design of a Raman silicon laser using a photonic crystal high-Q nanocavity without the reverse-biased p-i-n diode, which leads to the continuous-wave lasing operation with ultralow threshold power of ∼1 μW.
A real-time resonance tracking method is described and experimentally demonstrated in controlling an injection-seeded Q-switched Nd:YAG laser for stable single-axial-mode operation. Noise insensitive single axial mode with 100% recurrence is achieved with mW seeding power.
We present results from an optical communications testbed demonstrating polar coded pulse position modulation transmitted to a direct detection receiver. Using weak coherent states we achieve a photon information efficiency of 4.8 bits per received photon.
We report mid-infrared lasing around 3 μm from a single PbS subwavelength wire, with a cavity volume less than the wavelength cubed at 0.44 λ3. The maximal lasing temperature is 180 K under pulse operation.
We report a metamorphic GaSb-based laterally coupled distributed-feedback laser grown on a GaAs substrate that operates continuous wave at room temperature with a total output power of 40 mW.
We detect both pulsed and CW IR light using uncooled GaN or GaAs photodiodes using extremely-nondegenerate two-photon-absorption (2PA) which shows large enhancement over degenerate 2PA. Urbach-tail absorption limits the signal-to-noise ratio for CW detection.
HiPER (High Power laser Energy Research) is a European project aiming at exploring laser inertial fusion. An overview of the program with its time schedule is presented while emphasis is given on the laser driver studies.
A novel stabilization scheme for passively mode-locked lasers is demonstrated. By electrical absorber-modulation via the time-delayed laser output, a significant broadband reduction of phase noise is achieved. A comparison with all-optical feedback stabilization is given.
We demonstrate an ultra-broad lasing bandwidth (−3dB) of > 50 nm utilizing InAs/InGaAlAs/InP quantum-dash ridge-waveguide laser using chirped AlGaInAs barrier layer thickness. Our device exhibits a recorded bandwidth and significant improvement of laser characteristics.
We report on our research in power scaling OPSL around 1μm to exceed 100W per chip by combining a rigorous quantum design of an optimized MQW epitaxial structure, highly accurate and reproducible wafer growth and an efficient thermal management strategy. Recently, we have utilized these state-of-the-art optimized OPSL chips to achieve a new record single frequency output power of 15W. The highly coherent...
A violet multi-mode diode laser and cavity ring-down spectroscopy were used to detect trace amounts of NO2. The laser excites multiple cavity modes, simplifying the detector alignment and making it less susceptible to vibration.
We report on fabrication and spectroscopic characterization of Co:(Fe:):ZnSe/S crystals for saturable absorbers and gain elements for IR solid-state lasers.
We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.
We demonstrate a 1.2-GHz repetition rate, diode-pumped carbon nanotube (CNT)-mode-locked Yb:KYW laser with 168 fs pulse duration. To our knowledge, this corresponds to the highest repetition rate from CNT-mode-locked femtosecond bulk solid-state lasers.
Many important atmospheric constituents can be detected with infrared laser absorption spectroscopy. This talk reviews the engineering challenges, opportunities, and selected scientific results from recent airborne campaigns.
We report a tunable, pulsed multi-signal-line intracavity optical parametric oscillator based on a highly integrated 2D MgO:PP-APPLN in a Nd:YVO4 laser. >3.2-kW three signal lines with almost equal peak intensity were obtained from the system.
Spectrally efficient dual-comb detection is utilized for self-referenced measurements of spectral phase of three distinct semiconductor frequency combs. The higher-order phase is quantified for each, elucidating the dispersive properties of the gain and fiberized cavities.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.