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There is little work done to study the nuances related to paralleling the higher speed SiC Mosfet devices when compared to Si devices. This paper deals with the parallel operation of packaged silicon carbide (SiC) MOSFETs. The parameters that affect the static and dynamic current sharing behavior of the devices have been studied. We also investigate the sensitivity of those parameters to the junction...
The energy efficiency of typical data centers is less than 50% because more than half of the power is consumed during power conversion, distribution, cooling, etc. In this paper, a combination of two approaches to improve power supply efficiency is implemented and experimentally verified. One approach uses a high voltage DC architecture, designed to reduce distribution loss and remove unnecessary...
A data driven model with thermal effects is proposed for normally-off SiC JFET in this paper. The novel feature of the model is that it saves the trouble of obtaining the physical parameters. Besides, the effect of temperature on SiC JFET performance is taken into account. It is important because the physical parameters on materials and dimensions of a particular SiC JFET device are difficult to be...
Excellent physical and electrical properties of SiC material make SiC JFETs extremely attractive for high power density, high temperature and high frequency power applications. With increased switching speed, a stable operation capability of the devices under unclamped inductive switching (UIS) conditions is critical for the reliable operation of power switching systems. In this work, the behaviors...
The paper proposes a single end Flyback design with Silicon Carbide (SiC) based 1700V MOSFET to replace conventional two-switch Flyback converter. An active start-up circuit with 1700V SiC MOSFET is implemented to optimize the converter design with wide input voltage from 200Vdc to 1000Vdc and lower power losses. A 60W auxiliary power supply is developed to demonstrate higher performance and less...
The 15 kV SiC N-IGBT is the state-of-the-art high voltage power semiconductor device developed by Cree. The SiC IGBT is exposed to a peak stress of 10–11 kV in power converter systems, with punch-through turn-on dv/dt over 100 kV/μs and turn-off dv/dt about 35 kV/μs. Such high dv/dt requires ultralow coupling capacitance in the dc-dc isolation stage of the gate driver for maintaining fidelity of the...
Wide band-gap semiconductors (WBG) have recently drawn a lot of interest as main switches for power conversion processes. Owing to their inherent properties, materials such as Silicon Carbide (SiC) offer some advantages over silicon in the 1200V voltage range representing a solution to the quest for increased power density, safer thermal operation, better efficiency and reduced system form factor...
SiC devices exhibits improved performances in terms of switching speed and reduced on-state voltage drop, especially if a high-voltage and high-temperature environment is considered. In this paper the impact and opportunities of using high-voltage SiC switching devices in a pulsed power supply oriented to domestic induction heating applications is analyzed. Considering the converter requirements,...
Indirect matrix converters (IMCs) inherently provide more opportunity for higher power per volume densities than traditional back-to-back converters (BBCs). The use of new wide bandgap power semiconductor devices, like those based on silicon carbide (SiC), for different power converter applications is becoming more prevalent due to advantages realized at the system level when compared to conventional...
In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher...
Current unbalance in paralleled power electronic devices can affect the performance and reliability of them. In this paper, the factors causing current unbalance in parallel connected silicon carbide (SiC) MOSFETs are analyzed, and the threshold mismatch is identified as the major factor. Then the distribution and temperature dependence of SiC MOSFETs' threshold voltage are studied experimentally...
This paper develops a three-phase front-end power conversion stage for data center power supplies based on 400 Vdc power delivery architecture, which has been proven to have higher efficiency than traditional AC architectures. The front-end stage is based on three paralleled three-phase current source rectifiers, which have several benefits for this application. A control method is introduced for...
The purpose of this paper is to analyze the impact of interconnection inductances to overvoltage during turn-off transient of silicon carbide (SiC) devices. To understand the switching behavior of the SiC devices, the ringing and overshoots of the voltage caused by the device capacitance and interconnection inductances are considered. Parametric studies are conducted to compare the influences of printed...
Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized...
This paper analyzes a high efficient SiC MOSFET based inverter without externally antipa-rallelled diodes. To this end, steady-state performances of MOSFET channel and its body diode are demonstrated; proper control and modulation technique is applied to realize synchronous rectification of the inverter and to minimize the conduction loss of body diodes. Power loss analysis of the inverter under various...
This paper presents the design, prototype development, operation and testing of a 1 kW, 800 V output all-SiC boost DC-DC converter using SiC MOSFET and SiC Shottky diode chips. The switching frequency is raised up to as high as 800 kHz and a 230 °C junction temperature has been reached by switching-loss dominant self-heating. High frequency switching characteristics of the proposed converter are evaluated...
Transformerless Intelligent Power Substation (TIPS) is a 3-phase Solid State Transformer (SST) to interconnect 13.8 kV, 3-phase distribution grid with 480 V, 3-phase utility grid. The concept of TIPS was proposed as a solid state alternative to the conventional line frequency transformer. Various advantages of TIPS include unity power factor operation, controlled bidirectional power flow capability,...
This paper investigates the effects of dielectric constants, thicknesses and bevel angles on the breakdown voltage (VBD) improvement of 4H — SiC Schottky Barrier Diodes (SBDs) using field plates (FP) edge termination. Three high-k dielectrics (AlN, AlON and HfO2) are studied separately as FP materials. Besides the variation in dielectric constants, distinctive thicknesses and bevel angles are applied...
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