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The goal of our work was to study the capability of field effect transistors to measure high power THz radiation at frequencies from 0.1 up to 3 THz and to determine the linear detection limits. We observed different types of the photoresponse dependence on the incident radiation power. We qualitatively explain the unusual sub-linear behavior observed in high intensities.
Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10−10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications.
This abstract describes a method that is capable of capturing quadrature phase shifted interferograms in the sub-THz and THz spectral range using linear and circularly polarized antenna arrays and FET detectors.
We have fabricated AlGaAs/InGaAs/AlGaAs heterostructure field effect transistors (HFET) with integrated on-chip antennas and we have measured their optical responsivity when mounted in a in-house developed quasi-optical package with a silicon substrate lens
We present experimental study of terahertz detection by asymmetric dual-grating gate HEMT structures. The separate contributions of the gate leakage current and the loading effect to the rectification signal in the sub-threshold region was investigated versus temperature and frequency range.
In this paper, we study the noise performance of RTD-gated plasma-wave HEMT THz detectors. It is shown that noise in these devices is dominated by gate tunneling shot noise, and that a smaller effective electron mass promises much improved noise performance by boosting the responsivity while slightly decreasing the noise spectral density (NSD). This implies that it is desirable to realize RTD-gated...
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