The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Conjunction of silicon crystals with surface over 10 cm² with molybdenum discs by means of silver paste sintering is being discussed. It is shown that to ensure strength of joint and low thermomechanical stress selection of dependencies of pressure and temperature on time is very important. It is necessary to ensure thermal stability of multilayer metal process on jointed surfaces. Experimental elements...
The necessary shift from fossil fuels to regenerative sources imposes a great challenge for future power transmission. A large, meshed HVDC-Grid is proposed by several experts as the best and most efficient solution. For meshed DC-Grids, however, new and essential requirements — especially regarding availability and reliability — have to be researched very thoroughly. Fast and reliable handling of...
The reliability of discrete power semiconductor packages is getting more and more important in regard to the increasing number of power applications in the low power range. Therefore it is necessary to get more information and details on reliability of discrete packages and systems by performing reliability tests as well as simulations. In this paper the chosen approach and first results of simulations...
A new electro-thermal model of a semiconductor device has been carried-out in order to investigate electrical and thermal mappings of power devices during critical operations. This model allows evaluating the effect of chip metallization ageing on temperature distributions and current sharing between cells within an IGBT chip during short-circuits operations. One of the failure mechanisms in IGBT...
Health management and reliability are fundamental aspects of the design and development cycle of power electronic products. This paper presents the prognostic evaluation of a power electronic IGBT module. To achieve this aim, a simple state-based prognostic (SSBP) method has been introduced and applied on the data which was extracted from an aged power electronic IGBT and its remaining useful life...
Health management and reliability are fundamental part of the design and development cycle of the power electronic products. This paper presents the study and investigation about the prognostic and health management of power electronic IGBT module. To achieve this aim, a fusion approach has been introduced. In addition, for the physic based part of approach, a thermal model is used to predict temperatures...
The influence of the absolute junction temperature Tj∗ on IGBT power module lifetime was systematically investigated by means of active power cycling tests. Both the impact on the wire bond lift-off and the chip solder degradation mechanism could be determined separately by applying the concept of separating failure modes. The test results not only prove that classical lifetime models overestimate...
This paper introduces a methodology for real-time degradation monitoring and reliability assessment of novel sandwich-type integrated power switches during passive thermal cycling. The proposed approach enables to realistically monitor degradation from time zero, allowing the flexible definition of the most suitable failure criteria and test time.
Wide-band gap semiconductors allow operation of power electronics at considerably higher temperatures than Si-devices. However, a significant improvement of a power module temperature capability is necessary to fully exploit this benefit. For this reason reliability of various ceramic substrates undergoing liquid-liquid thermal shock cycling −50–190 °C was tested. Additionally, an impact of the large...
The submodel technique was mainly developed in mechanical engineering for complex parts and assemblies. In the simulations of microelectronics housing the technique was successful implemented for thermal cycling conditions. In thispaper the evaluation of the submodel technique for power electronic packages under power cycling conditions will be discussed.
This paper presents a design procedure of the DC-side stray inductance for high-speed switching circuit using SiC power devices considering an over voltage and a short-circuit current. In order to verify the analysis results of the over voltage and the short-circuit current, the experiments are conducted. Moreover, the design procedure of the DC-side wiring structure considering the stray inductance...
A simple Vce online monitoring circuit is presented in this paper. It allows an accurate wear out prediction of IGBT modules, in high-power applications, during normal converter operation. Bipolar measurement allows monitoring of both IGBT and antiparallel diode. The circuit uses two serial connected diodes to sense the Vce voltage with millivolt accuracy. One diode acts as a protection to block high...
DAB are a new kind of substrates in which the copper layer was replaced by an aluminum layer. In [1] a increase of the roughness of these aluminum layer was observed during thermal cycling tests. A similar effect was observed during power cycling tests in [2, 3]. This paper will discuss this effect with experimental results and Finite Element (FEM) simulations.
This paper presents a design and experimental validation of a temperature feedback control scheme to realize the reduction of temperature variation amplitude of power devices or modules. A full-order observer state-space thermal model enables estimation and control of the temperature at reliability critical locations only measuring one accessible location.
Reliable operation of the power supply and distribution system is of vital importance for the safety of a spacecraft. In this paper, a topology suitable for power supply and distribution system and its grid-connecting operation is introduced, then conceptions of basic reliability and mission reliability are explained. Based on system life obeying exponential distribution, reliability of the system...
The popularity of transformerless photovoltaic (PV) inverters in Europe proves that these topologies can achieve higher efficiency (e.g., ≥ 98% has been reported). Along with the advanced power electronics technology and the booming development of PV power systems, a long service time (e.g. 25 years) has been set as a main target and an emerging demand from the customers, which imposes a new challenge...
Although they can operate at elevated junction temperature, silicon carbide power devices can in some cases fail, even at low ambient temperature. This destruction mechanism, called the thermal run-away, is described in the paper. Then, the sensitivity of normally-on SiC JFETs (SiCED) to this mechanism is evaluated using a model based on experimental measurements performed over a wide temperature...
This paper presents a reduction method for a torque ripple resulting from a motor phase current sensor offset error for motor drive applications such as a hybrid electric vehicle (HEV). The proposed method compensates for the detected motor phase current offset error by subtracting the detected motor phase current offset error value indirectly estimated using the inverter offset voltage reference...
While aluminum-based metallization schemes on Si and corresponding top-side connections via Al-bonds have been optimized for the last decades and are well understood today, only few investigations have been done on the interaction of thick Cu wire-bonds and copper-metallizations on SiC. In this work the mechanical as well as the electrical interactions of copper-metallization schemes have specially...
Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.