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Direct Water and Double-Sided Cooled Power Modules (DWDSCPM) are especially attractive due to high thermal performances. The DWDSCPM was able to reduce the thermal resistance by 50% and increase power density of the traction inverter by 70% in comparison with a conventional power module.
This paper presents a study of the behavior of power MOSFET devices under hard commutation of the body diode as well as improvements of that behavior shown by latest technology developments based on detailed simulations of the device. Hard commutation of the body diode can represent a challenging mode of operation in regards to the ruggedness of power MOSFET devices. Also, the behavior of the body...
A new electro-thermal model of a semiconductor device has been carried-out in order to investigate electrical and thermal mappings of power devices during critical operations. This model allows evaluating the effect of chip metallization ageing on temperature distributions and current sharing between cells within an IGBT chip during short-circuits operations. One of the failure mechanisms in IGBT...
In this paper, a new isolated DC-AC converter with “sinusoidal shape” output voltage is analyzed, simulated and verified with a scaled prototype. Design expressions for selection of passive component values and design requirements of power semiconductor devices are given. The control algorithm is thoroughly investigated. The converter losses based on the commercially available semiconductors are calculated...
The series connection of IGBTs is necessary when the blocking voltage requirements are higher than the rated voltage of commercially available IGBTs. However, voltage unbalances caused by different switching behaviors during the turn off process of series connected IGBTs could lead to the failure of one IGBT if it exceeds its maximum blocking voltage. This paper demonstrates that the proper operation...
In this article several innovative ways of utilizing Power Integrated Modules (PIM) as switching device in a DC power supply are presented. PIM have advantages in compactness of design, cost and fast prototype due to easier PCB layout. A PIM converter topology is chosen and designed resulting in an experimental setup. Results from the setup are presented showing the feasibility of using a PIM module...
This paper presents the development of a unified test set-up and experimental results of the robustness characterisation of new generation of silicon carbide (SiC) power MOSFETs. In particular, unclamped inductive switching (UIS) and short-circuit withstand capability (SC) are investigated, with the aim of assessing the actual limits of operation of the devices and highlighting the underlying physical...
This paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices, including the MOSFET, BJT, SJT, and normally-on and normally-off JFET. Both commercial and sample devices from the semiconductor industry's well-known manufacturers; namely Cree, GE, ROHM, Fairchild, GeneSiC, Infineon, and SemiSouth, are evaluated in this study. To carry out this work,...
The characterization of voltage-dependent capacitances of power semiconductor devices is very important for modeling their dynamic performances. A measurement method using multiple current probes has been proposed to characterize inter-electrode capacitances of power devices. The advantage of this method is that it can isolate the measurement devices from the high-voltage DC bias power source. This...
The paper presents a novel method for online estimation of the junction temperature (Tj) of semiconductor chips in IGBT modules, based on evaluating the gate-emitter voltage (Vge) during the IGBT switch off process. It is shown that the Miller plateau width (in the Vge waveform) depend linearly on the junction temperature of the IGBT chips. Hence, a method can be proposed for estimating the junction...
Nowadays the field-stop (FS) IGBT provides lower saturation voltage drop and lower switching losses than the conventional non-punch-through (NPT) IGBT, making the FS IGBT well suited for induction heating (IH) applications. A relatively recent improvement in the FS IGBT — the integration of an antiparallel diode on the IGBT die through use of the shorted-anode (SA) technology — made the FS IGBT even...
Due to new applicative domains like embedded systems, power electronic converters are getting more and more compact, increasing their power densities and working in extreme environments with higher lifetime requirements in accordance with design to cost optimization. Power components packaging is thus involved in many research considerations such as thermal management, electromagnetic interference...
In this paper, we present a thermal measurement method of the losses of eGaN-FET power transistor used in one phase leg. The dead-times are important to avoid short-circuit phase, but they can lead to a large part of the total losses because of reverse conduction. Thus, the drive must be optimized according to load current to keep losses at lowest lever.
No generally accepted and widely adopted condition monitoring method currently exists for power electronic converters. Several failure precursors have been proposed for power electronic components. In this paper the authors investigate the requirements for a condition monitoring system for different applications and consider the applicability of previously proposed failure precursors.
Fault tolerant operation of single-ended non-isolated DC-DC converters used in embedded and safety critical applications is mandatory to guaranty service continuity. This paper proposes a new, fast and efficient FPGA-based open and short-circuit switch fault diagnosis asssociated to fault tolerant converter topology. The results of Hardware-In-the-Loop and experimental tests are presented and discussed.
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