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The state-of-the-art scaled down CMOS processes have led to devices with extremely high Ft reaching several hundreds of GHz. This high Ft can be traded with power consumption by moving the operating point towards weak inversion with Ft reaching tens of GHz, high enough for many modern RF applications. The new charge-based bulk compact MOSFET model BSIM6 was developed with the objective to provide...
Continuous technology advancements have forced MOSFET architecture to evolve from bulk to SOI to multigate MOSFETs. BSIM compact models have helped circuit designers to realize their designs first time correct using accurate physical models used in SPICE simulation. BSIM3 and BSIM4 are threshold voltage based bulk MOSFET models while BSIM6 is charge based bulk MOSFET model, which include physical...
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