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The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm−1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.
We demonstrated efficient nonlinear coupling between local vibrating molecules and propagating polariton modes at the vibration frequency (namely, mid-IR frequencies) using suspended graphene waveguides. Each waveguide deposited a micron-scale periodic metal (plasmonic) structure. Nonlinear effect, at very modest pump laser intensities has been demonstrated; these intensity levels are often used in...
In situ doping with Zn and C impurities induces periodic twin plane boundaries along the axis of planar <110> GaAs nanowires grown via Au-catalyzed vapor-liquid-solid (VLS) mechanism in a MOCVD environment.
Optical gain properties of InGaN quantum wells on ternary substrates are analyzed for visible lasers. Larger optical gains are obtained by employing ternary substrates, which indicate its potential for green-emitting diode lasers.
Plasmonic color filters and polarizers were produced using nanotransfer printing to create aluminium nanostructures, as small as 75nm, on a polycarbonate sheet measuring 10mm × 12mm. Plasmonic filters showed good agreement with simulations.
Thin-film crystalline silicon photodiodes with the highest uncooled responsivity to dark current density ratio (0.30–0.54 cm2/nW for λ= 470 nm–600 nm) reported to date are described herein for integrated biomedical imaging and biochemical sensing.
The NdF3 thin film grown at 670 K exhibited the maximum photocurrent and the response below 180 nm in sensitivity spectrum. Moreover, the increase in current achieved 4-digit growth before and after VUV illumination. These observed characteristics open up the possibility of high sensitive VUV photoconductive detectors using fluorides.
Traveling wave electrodes suitable for wide bandwidth substrate removed electro-optic modulators containing buried electrodes are reported. Experimental results indicate modulator bandwidths in excess of 35 GHz along with sub volt drive voltage.
This paper discusses how the addition of Bismuth to III–V alloys gives rise to improved band structure potentially offering reduced non-radiative losses and improved temperature stability for devices in the near- and mid-infrared.
We demonstrated a flexible thin-film CdSe quantum dot (QD) photodetector by sandwiching a piece of QD drop-casted tracing paper between two PEDOT:PSS electrodes printed by a desktop inkjet printer on a transparency film.
Vertical cavity surface emitting lasers (VCSELs) are important light sources for communication and sensing applications. The materials used for fabricating VCSEL emitting at 650–1000 nm are typically limited to GaAs-based compounds. Increasingly III–V semiconductor photonic devices have been bonded to Si [1] and other substrates [2]. To extend the applications of VCSELs, we demonstrate a bonding approach...
A mid-infrared guided-mode resonance based reflector was designed, fabricated and tested for applications at 2.94µm. The proposed polarization insensitive devices were fabricated using a quartz/hafnium dioxide system.
A GaInAsP/Si hybrid Fabry-Perot laser, fabricated by low temperature N2 plasma surface activated bonding on a Si substrate, was demonstrated. Lasing operation at room temperature was realized with a threshold current density of 0.85 kA/cm2.
Recently, the Fano resonance, known from atomic physics, has been employed for a wide variety of nanophotonic structures, such as quantum dots, photonic crystals (PCs), plasmonics, and metamaterials. [1, 2] With modal dispersion engineering, Fano filters and reflectors can all be realized in single-layer dielectric PC structures. [3–5] We report here ultra-compact surface-normal high-Q Fano resonance...
Black silicon with slanted nanopillar array on planar and microstructure was produced for surface-enhanced Raman spectroscopy (SERS). The angle dependence of etching angle and nanopillar slanted angle was investigated with scanning electron microscopy.
The creation of silicon based light sources has been a major research and development effort world-wide. Among various approaches to silicon based light sources reported thus far, the hybrid gain-medium approach (especially integrated with group III–V materials) seems to be the most promising one due to its higher efficiencies than any others. [1–3]
Integration of active III/V devices on Silicon substrates would tremendously increase the functionality of this semiconductor material. In order to realize true monolithic integration, a defect-free nucleation layer is of outmost importance. As CMOS industry nowadays focuses on exactly oriented (001) Si substrates, the integration of a III/V semiconductor based device structure, employing either lattice...
We report on the direct epitaxial growth of InAs quantum dot based laser structures on silicon substrates. Multiple layers of InAs quantum dots serve as the gain region in a III/V broad area laser structure heteroepitaxially grown on silicon. Aspects of the heteroepitaxy and quantum dot growth are examined.
Recently preferential orientation was demonstrated in phosphorescent emitters. We simulate the efficiency of oriented emitters in bottom and top-emitting OLEDs. The oucoupling is increased by a factor 1.4 and 1.68 for bottom and top emission.
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