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We discuss our recent results on 2D and 3D photonic crystal (PhC) nanocavity lasers. By utilizing high quality InAs quantum dots (QDs), we demonstrated various types of 2D PhC nanocavity lasers including a single dot laser. The micromanipulation technique boosts the quality factor of 3D PhC nanocavity, which facilitated the first demonstration of lasing oscillation in 3D PhC nanocavity. A silicon-based...
In conclusion we have evaluated the potential of In(Ga)As quantum dots grown on silicon as photodiodes by characterising their electrical and optical properties. The responsivity spectra showed a peak related to quantum dot transition at 1280 nm of 5 mA/W, with an absorption tail extending beyond 1.3 µm. The measured dark currents are over three orders of magnitude lower than those for Ge on Si detectors...
16+ low-noise optical comb lines with 80 GHz spacing and 0 dBm/line output power are generated by a single InAs/GaAs quantum dot (QD) Fabry-Perot laser. Electrical power consumption is reduced dramatically down to 6 mW/line.
We demonstrate the coherent creation of a biexciton in an InAs/GaAs quantum dot embedded in a planar microcavity through resonant two-photon excitation. This results in laser scattering-free cascaded single photons with excellent two-photon suppression. We also observe Rabi oscillations, Ramsey interference and high indistinguishability. This scheme can be used to generate entangled photon pairs and...
Vertical-cavity surface-emitting lasers (VCSELs) have achieved remarkable performance in threshold, speed, and efficiency. However the VCSELs have so far achieved their performance without the benefit of a buried-heterostructure (BH) gain structure. A high quality BH gain structure can be expected to dramatically improve VCSEL performance by eliminating parasitic charging effects in the perimeter...
Impacts of gain compression on modulation properties of quantum dot lasers are investigated with a new modulation transfer function derived from a semi-analytical approach. Results show that non-linear gain causes severe degradations in laser dynamics.
As data rates increase, traditional electrical interconnects for chip-chip or intra-chip communication will be replaced by low-power optical interconnects. The photonic integrated circuit (PIC) forming such an interconnect should exhibit low loss and good signal integrity and be capable of high temperature operation. In this talk, we will present the design, fabrication, and characteristics of a PIC...
We report on the direct epitaxial growth of InAs quantum dot based laser structures on silicon substrates. Multiple layers of InAs quantum dots serve as the gain region in a III/V broad area laser structure heteroepitaxially grown on silicon. Aspects of the heteroepitaxy and quantum dot growth are examined.
We developed a spatially resolved time dependent model which enables modification of structural parameters in order to enhance modulation capabilities of quantum dot lasers. Carrier dynamic equations, homogeneous and inhomogeneous gain broadenings are included.
Self-organized quantum dots (QDs) applied to light-emitting devices extend their spectral range, temperature stability and allow new approaches including single photon emitters and multi-wavelength lasers and light-emitting diodes.
We present a theoretical model supported by experiments showing that diode lasers having large gains with a small signal modulation which is limited by gain compression, can be modulated digitally at very high bit rates.
We present the studies on the development of InAs/GaAs quantum-dot lasers monolithically grown on Si for Si photonics. Room-temperature lasing near 1.3 µm has been demonstrated for the devices on Si and Ge substrates.
We present 1.3 µm InAs/GaAs quantum dot Fabry-Perot and photonic crystal nanocavity lasers on Si substrates fabricated by wafer bonding, with thresholds of 205 A/cm2 and 2 µW, respectively, the lowest of lasers on silicon.
We describe the metalorganic chemical vapor deposition and patterning by electron beam lithography and selective area growth or wet chemical etching of quantum dot and inverted quantum dot (nanopore) structures suitable for diode lasers.
Entangled photons are essential for scalable optical quantum communication and processing. We demonstrate electrical generation of entangled light using a quantum dot within an LED, and interactions between entangled photons by two-photon-interference.
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