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We demonstrate dual wavelength operation, wavelength switching, and bistable behaviour in a Tm:ZBLAN fibre laser operating at 800 nm. The lasers are built in both single and cascaded-cavity configurations.
Modified uni-traveling carrier (MUTC) photodiodes with diameter of 28 µm and 20 µm flip-chip bonded on AlN substrate demonstrated RF output power of 25 dBm and 19 dBm at 25 GHz and 30 GHz, respectively.
We demonstrate a novel high-speed GaAs/In0.5Ga0.5P based laser power converter with under-cut mesa to minimize junction capacitance. Under near turn-on voltage (+0.8 V), high-speed (10Gbit/sec) data detection with ∼20% power generation efficiency can be achieved.
We demonstrate a CMOS-controlled color-tunable micro-display system based on a micro-light emitting diode array made from one InGaN epitaxial structure. This system can also be used for high speed optical data transmission.
We demonstrate ultra-compact intra-cavity contacts fabricated with an embedded Al2O3 etch-stop, which effectively shorten the cavity length and enhance the output power of a multi-terminal VCSEL.
Adiabatically flared slab-coupled optical waveguide lasers (SCOWLs) at 1.06 µm wavelength have been studied, achieving a large fundamental mode and a 32% increase in COD power. Capabilities and limitations of the taper mechanism are discussed.
While saturable absorber can control the hysteresis window width in multi-mode-interferometer bi-stable laser diodes, spatial gain overlap showed significant effect on the threshold currents of the hysteresis window.
The light extraction efficiency of InGaN light-emitting diodes employing microsphere arrays with different refractive indices and diameters were studied, and the use of anatase TiO2 microsphere arrays resulted in 2.4-times increase in light extraction efficiency.
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