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We demonstrated efficient nonlinear coupling between local vibrating molecules and propagating polariton modes at the vibration frequency (namely, mid-IR frequencies) using suspended graphene waveguides. Each waveguide deposited a micron-scale periodic metal (plasmonic) structure. Nonlinear effect, at very modest pump laser intensities has been demonstrated; these intensity levels are often used in...
We have compared a number of well known plasmonic guides in terms of power confinement, normalized power density, and propagation loss. We have identified the relative advantages and limitations of these guides.
First-principle analysis of the band structure for dilute-As GaN1−xAsx semiconductor was carried out, and the finding showed the direct bandgap properties of this alloy covering the entire visible spectral regime applicable for new visible emitters.
Large area and semi-transparent highly light sensitive nanocrystal skin is demonstrated via spray-coating nanocrystals on top of polyelectrolyte-polymers based on photogenerated potential buildup where no external bias is applied.
We propose an analytic theory of resonances in metallic nanoslit arrays. This is a minimal formulation of the essential physics involved in the resonance interactions of surface plasmon-polaritons and cavity modes.
We demonstrate the utility of epitaxially-grown, highly-doped semiconductors as plasmonic designer metals, with plasma wavelengths across a broad range of the mid-infrared. Micro-particles fabricated from these materials are shown to support localized surface plasmon modes.
Nanolasers made from III–V active materials and metal-clad cavities have attracted research interest because of the small volume possible with metal nanocavities.1 Proposed applications include intrachip optical interconnects and optical sensors. The metal-clad nanocavities are one of several cavity approaches being studied, and differ from dielectric and semiconductor nanocavities in their high optical...
III–V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III–V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers...
By leveraging the plasmonic mode of dielectric-loaded surface plasmon waveguide, a strong enhancement of the SERS signal between adjacent core-shell nanoparticles could be realized through coupling to the propagating SPP.
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