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The current-voltage (I–V) and capacitance-voltage (C-V) measurements of Aluminum (Al) Schottky contacts on undoped and platinum-doped NTD n-Silicon were carried out in the temperature range of 300–420 K. The I–V and C-V characteristics were used to extract the saturation current, the ideality factor and the Schottky barrier height of the diodes. These parameters were correlated to the defect levels...
This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 µm length, 100 µm width and 1 µm thickness. Both designs have percentage of magnetoresistance...
The aim of this paper is to present the application of three cells of a single phase ac-chopper interfacing with series injection transformer for compensating voltage sag in three phase four wire system. Each ac-chopper cell is independently controlled by instantaneous value voltage control technique. This technique is a comparison between the sinusoidal reference signal and the active triangle signal...
In this paper, nano silicon powders were prepared by grinding technique and subsequently mixed in sol-gel of Tetraethylorthosilicate and ethanol solution. The silicon dioxide films synthesized from sol-gel solution were preliminary studied in the term of optical property as refractive index (n) under varying aging and annealing conditions. We have also determined x-composition of gel-prepared SiOx...
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