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A radiation hardened 256K-bit asynchronous SRAM is presented. It is fabricated by a 0.5-micron, radiation hardened CMOS PDSOI process with 3 layers of metal. It features 800uA stand-by current, 42ns access time, 300K rad(Si) total dose tolerant and 1.5 × 1011rad (Si)/s dose rate survivability. A 28-pin DIP package is used. The circuit operates with ambient temperature from -55 to +125°C and power...
A 6-GHz low-phase-noise voltage-controlled oscillator (VCO) is proposed. A varactor based coarse tuning method which differs from the traditional switch-capacitor based architecture is adopted. The source feedback resistors and a modified filtering technique are used to suppress low and high frequency noises of current source, respectively. To verify the concept, a prototype VCO is fabricated in 0...
This paper presents a cell balancing management for battery pack. It is used for each cell in battery pack to protect pack from damages such as overheating and overvoltage taken by the different performances between different cells, it manages individual cell with CC-CV charging strategy, shunts charge current smoothly to protect every cell preferably; in order to be suitable for different charge...
The terahertz frequency GaN Gunn diodes with GaN and AlGaN electron launchers are investigated by using an improved NDM model of GaN. The simulations demonstrate that there exists a shift of the oscillation mode from dipole domain mode toward accumulation mode with increased temperature, and the AlGaN launcher GaN Gunn diode can generate better power performance at stable oscillation mode than the...
Direct digital frequency synthesizer (DDFS) plays an important role in modern digital communications. This paper proposes a novel implementation of a 300MHz direct digital frequency based on modified CORDIC in 0.35μm CMOS technology. The CORDIC algorithm is a well-know iteration method for the efficient computation of fundamental functions, but each iterate selects the rotation direction by analyzing...
The paper describes the design and implementation of a speaker driver applied to Class G/Class I with single phase power supply. Gain expanding and compressing technology are employed in signal processing circuit to optimize power dissipation. Experimental results using 0.18μm N-well CMOS show that it can obtain less than 0.006% THD at low power range and less than 0.4% at medium power range with...
Two high-accuracy RC Oscillators with different trimming control are demonstrated in this paper. The two oscillators use voltage trimming and current trimming respectively. The experiment results, obtained from the circuits fabricated in 0.5 μm CMOS process indicate the IC oscillators provide a 160KHz clock signal with a frequency spread of ±10% before the trimming. After centering the oscillator...
This paper accesses the main factors that affect the resonant frequency and power consumption in on-chip transformer based bufferless resonant clock distribution network(CDN), such as on-chip transformers with different ratio, wire width of clock grid and the size of energy compensating cell. Through an unsigned 32*32 bit pipeline multiplier under TSMC 65nm CMOS technology, we perform a post-layout...
Capacitance-voltage (C-V) and frequency dependent conductance-voltage (G-V) measurements have been carried out to investigate the charging and discharging effect induced by interface states and nanocrystalline Si (nc-Si) in floating gate MOS structures. Distinct conductance peaks are observed in the G-V curves for the floating gate with and without nc-Si dots. Based on the calculation of interface...
Well-aligned ZnO nanorods were grown on the p-GaN substrate by a hydrothermal method and n-ZnO nanorods/p-GaN heterojunction LED structures were formed. The electroluminescence (EL) properties of this structure were studied under both forward and reverse bias. The nanorod LED device only has light output under reverse bias. The I-V characteristic results show that the nanosized junction can increase...
The effect of isotropic and anisotropic scattering within the drain region of diode with ballistic channel is investigated using the semiclassical Monte Carlo simulation, and the results are discussed. The results show that the isotropic scattering can severely degrade the steady-state current, the electrons mean velocity, and increase the electrons concentration in channel because some hot electrons...
A systematic computational fluid dynamic (CFD) study was performed to investigate the effects of operating parameters of chamber pressure and wafer carrier rotation rate on the GaAs/AlGaAs deposition rate and uniformity in vertical rotating disc metal organic chemical vapor deposition (MOCVD) reactors. It is shown that significant improvement of the reactors efficiency can be achieved by finding the...
A new planar-type body-connected FinFET structure produced by the isolation-last self-align process is demonstrated and characterized by using three-dimensional (3-D) numerical simulations. The new process step first defines the gate region and then the active region, thus it can achieve fully self-alignment undoubtedly. Besides, due to the isolation-last process (ILP), an additional body region (ABR)...
P-MOSFETs with HfO2 gate dielectric and TiN metal gate were fabricated on compressively strained SiGe layers with a Ge content of 50 at.% and electrically characterized. The devices showed good output and transfer characteristics. The hole mobility, extracted by a split C-V technique, presents a value of ~200 cm2/V·s in the strong inversion regime.
Ultrathin (11 nm) strained SiGe-on-insulator (SGOI) with a Ge fraction of 0.5 was fabricated by Ge condensation technique. The residual compressive strain as high as 1.72% was achieved in SGOI layer by reducing the initial thickness of as-grown Si0.93Ge0.07 layer. Strained-SGOI pMOSFET exhibits a hole mobility of 3 times higher than that of Si-on-insulator pMOSFET.
The activation characteristics of Si ion-implanted gallium nitride (GaN) have been investigated. High-resolution X-ray diffraction (HRXRD) analyses indicate that ion-implanted damage can be effectively recovered by rapid thermal annealing (RTA) up to 1100°C. With the implantation dose 1016cm-2, the sample presents strong n-type conductivity, reaching a maximum sheet carrier concentration 2×1015cm-2...
Based on MOS capacitors, this work aims to study the thermal and electrical characteristics of HfLaON with different nitridation treatments by evaluating the device properties and monitoring the induced changes.
We propose the use of bilayer graphene as nanoelectrodes for solid-state nanopore-based DNA sequencing, and perform molecular dynamics simulations and electrical transport property calculations to explore the potential merits of this proposal. The results of our investigation show that compared to single-layer graphene nanoelectrodes, bilayer graphene drastically raises the conductance by 1~2 orders...
A novel CO2 non-dispersive infrared (NDIR) sensor using the mid-infrared (mid-IR) hollow fiber as a gas cell has been demonstrated. The mid-IR hollow fiber is chosen for its optimum transmission band (bandgap) overlap with CO2 fundamental absorption spectrum around 4.26 μm to serve as a filter. A comparison with the system using a smooth metal cell is presented. The signal noise suggests that a measurement...
A new type of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with self-aligned metal electrodes (SAME) is systematically characterized. New device features different from conventional poly-Si TFTs are found, and are attributed to the presence of Schottky barriers at the channel ends.
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