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Silicon nanowire transistor with side-gate and back-gate has been fabricated by electron beam lithography combined with dry oxidation on a doped silicon-on-insulator wafer. The effects of back-gate and side-gate on the properties of single electron transport were investigated by measuring the channel current as function of the applied gate voltages. The tunable single electron effect and Coulomb oscillations...
A white LED driver chip applied in backlight is proposed, which is based on pulse width modulator. The design of modules such as current reference, oscillator and dynamic slope compensation are discussed in detail. The simulation results, based on CSMC 0.5μm BCD technology, show that the input voltage is in the range of 3.3~5.5V, the output voltage is up to 20V when the output current is between 15...
A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 300°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C.
The unbalanced speed for writing 0 (Reset) and 1 (Set) of phase change memory (PCM) causes lots of internal timing fragmentation during conventional parallel writing process. This fragmentation is the bottleneck of PCM writing speed. In this work, a novel self-write method is developed to eliminate fragmentation and enhance write throughout. The experimental result shows that this method enhances...
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching...
This is the first report of a technique for inserting a thin Zr interlayer into a nickel film to improve the thermal stability of the silicide formed from this film. The sheet resistance of resulting Ni(Zr)Si film was lower than 2 Ω/□. X-ray diffraction and raman spectral analysis showed that only the silicides low resistance phase (NiSi), rather than high resistance phase (NiSi2), was present in...
The influence of neutron irradiation on the deep levels in GaN epilayer is studied. Thermal stimulated current (TSC) and low temperature photoluminescence (PL) techniques are used to determine the position of deep levels. Four traps are found in irradiated GaN and five traps in unirradiated sample by resolving TSC spectrum. The activation energy (Et), capture cross section (St), and concentration...
This work presents the mechanism of Stress induced leakage current (SILC) under NBT stress. Experiment results show that there are three kinds of oxide traps generated under NBT stress: hole traps with full recoverable characteristic, hydrogen related traps with irrecoverable characteristic and a kind of positive trap which can promote the hole tunneling after neutralization. The cause of SILC is...
A detailed experimental study on the reliability corner of pMOSFETs with drain-bias-dependent NBTI degradation was conducted. Unlike to the conventional NBTI degradation, the concurrent drain bias stresses exhibit a complex correlative effect in both degradation and recovery stages. Our results show that the degradation of NBTI with drain bias at Vdd becomes the worse reliability corner for pMOSFETs...
In this paper, electron mobility (μ<;sub>e<;/sub>) and hole mobility (μ<;sub>h<;/sub>) of (110) nFETs and pFETs are studied, respectively. It is demonstrated that, because of the non-parabolicity along <;110>, the conventional effective mass model is insufficient to accurately evaluate the quantum confinement effects in (110) nFETs..
The Zero Temperature Coefficient (ZTC) is investigated experimentally in planar and standard/biaxially strained triple-gate nFinFETs fabricated on SOI wafers. In this work a simple model to analyze the behavior of the gate-source voltage at the Zero Temperature Coefficient point (VZTC) is proposed in the linear and saturation operation regions. The analysis takes into account the temperature variations...
Thermoelectric properties of Si and Ge nanowires are studied theoretically using sp3d5s* tight-binding and ballistic transport approach. We found that the Seebeck coefficient and power factor per area depend on the nanowire size and its orientation. In addition, for nano-scale nanowires, cross-sectional shape effect is considerable and transmission mode dominates the performance. Temperature also...
Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as...
We present a reliability analysis of a new vertical MOSFET with the middle partial insulation and block oxide (bMPI) structure for 1T-DRAM applications. The proposed 1T-DRAM device can increase the pseudo-neutral region due to the bMPI under the vertical channel and its device sensing current window is improved by about 95% when compared to the planer bMPI 1T-DRAM. Owing to the double-gate structure,...
This paper explains the development of a compact model for organic thin film transistors (OTFTs), analyzing some of their features. The model, based on hopping transport between localized states, includes a mobility expression that depends explicitly on both the characteristic temperature and density of states of the distribution of localized states. Temperature dependences are also taken into account...
In this paper, a micro vacuum pirani gauge made of single crystal silicon has been developed and its temperature and DC current response properties in different pressures were firstly studied detailedly. The resistance of it increases with the temperature exponentially. There is a current threshold resulting from the materials characteristics and the precision of the instrument at low pressure. And...
An improved analyticl model for the electron mobility in wurtzite ZnO is developed. The numerical results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The improved model describes properly the variation of the field-dependent mobility with carrier concentration and temperature, not only for room temperature but...
In this paper, we use a novel way to research the piezoresistance coefficients of AlGaN/GaN HEFT affected by the changes of temperatures in the structure of micro-accelerometer. It is shown that saturation current of HEFT would decrease with the increasing temperature, which is about 0.028mA/°C. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can...
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