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This paper provides a comprehensive guideline to design high efficient Si thin film solar cells via surface periodic Si nanopillars (SiNP) array texturing. A power conversion efficiency of ~18.1% is predicted to be achievable for the cell consisting of the SiNP array (array periodicity of 500 nm, SiNP diameter of 250 nm, and SiNP length of 1000 nm) on 800 nm thick underlying Si film based on the optical...
A 2D analytical model of the bulk-silicon triple RESURF devices is proposed. Based on the 2D Poisson's solution, the new analytical expressions of the surface potential and electric field distributions are obtained. According to the model and the semiconductor device simulator Medici, the electric field reduction mechanism and breakdown characteristics in the device are discussed. Further, a RESURF...
The 5-nm-thick HfO2 film doped with 35 mol% Gd2O3 (GDH) as a high k dielectric has been epitaxially grown on Si (100) substrate by pulsed laser deposition (PLD). In situ reflection high-energy electron diffraction (RHEED) evolution of the (100)-oriented GDH during the deposition has been investigated and shows that a two-dimensional (2D) single crystalline GDH grows with a smooth surface. The in-plane...
A Magnesium Doped Layer (MDL) under the 2-DEG channel and a Drain Metal Extension (DME) are proposed to provide a new degree of freedom in the optimization between breakdown voltage (BV) and specific-on-resistance (Ron-sp) in AlGaN/GaN HEMTs. The surface electric field of the proposed structure is distributed more evenly when compare to the MDL-only structure with the same dimensions. A breakdown...
An improved mobility model for device simulation is presented. The model is based on charge density instead of effective surface electric field. Compared to the other models, it accounts for substrate bias effect and channel length dependence.
The terahertz frequency GaN Gunn diodes with GaN and AlGaN electron launchers are investigated by using an improved NDM model of GaN. The simulations demonstrate that there exists a shift of the oscillation mode from dipole domain mode toward accumulation mode with increased temperature, and the AlGaN launcher GaN Gunn diode can generate better power performance at stable oscillation mode than the...
A superjunction LDMOST with a floating oppositely doped buried layer in p-substrate is proposed. The buried layer provides another pn junction to sustain drain voltage, reduces the substrate-assisted-depletion effect and generates new electric field, which modulates the bulk electric field in off-state. Simulation results show that the proposed structure achieves significant breakdown voltage improvement...
An VPNP device optimization technology was presented for complementary bipolar process. Based on process and device simulation, an SIC process for high speed NPN transistor improvement was applied to the optimization of VPNP transistor. Sub-micron VPNP trasistor increases its feature frequency by 30%, namely, more than 3.0GHz. It features breakdown voltage of BVceo>6.0V, which results to a wider...
PIN tunneling field effect transistor (TFET) is one of the most promising devices due to its low sub-threshold swing. In this paper, using TCAD simulation, we investigate the doping and structure dependence of the electric field in PIN TFET. We show that an insertion of a thin N layer into PIN structure (i.e., PNIN TFET) not only enhances the drive current but also improves the reliability of the...
A lateral power MOSFET with the extended trench gate is proposed in this letter. The polysilicon gate electrode is extended to the substrate, which improves the breakdown voltage (BV) and specific on-resistance (Ron). It indicates by simulation that the Ron of 1.86mΩ.cm2 with a BV of 174V in the proposed structure is nearly 53% less than the Ron of 3.96mΩ.cm2 with a BV of 126V in the typical structure.
A novel integrated Low Voltage Power Supply (LVPS), based on a field-clamped region as the output port of a primary power supply, is studied in this paper for minimizing the cost of fabrication. As the biased voltage varies within a wide range, the output voltage of proposed LVPS can be maintained to an appropriate value. Detail properties of the LVPS and the field clamped region are analyzed and...
The concept of atomically controlled processing for group IV semiconductors is shown based on atomicorder surface reaction control in Si-based CVD epitaxial growth. Si epitaxial growth on B or P atomic layer formed on Si(100) or Si1-xGex (100) surfaces, is achieved at temperatures below 500°C. B doping dose of about 7× 1014 cm-2 is confined within an about 1 nm thick region, but the sheet carrier...
A novel structure of 4H-SiC MESFETs is proposed which focuses on surface trap suppression. A MOS gate controlled spacer layer is shown to improve both DC and AC characteristics due to suppressed surface effect and decreased gate capacitance. A very high power density of 6.1 W/mm is obtained at S band operation. Compare with the well recognized buried gate structure, there is a significant improvement...
Summary form only. Germanium doped Czochralski silicon has been invented and investigated last decade. It has been used in ultra larger integrated circuits (ULSI). It was reported that germanium doping in Czochralski silicon could eliminate void defects, enhance oxygen precipitation, improving internal gettering ability, and also increase mechanical strength. In this presentation, germanium doped...
This work presents a novel low leakage bulk substrate based SDOI (Source-Drain on Insulator) FINFET structure and a new integration scheme for fabrication thereof. Through simulation, SDOI FINFETs were thoroughly compared to Bulk FINFETs and SOI FINFETs. SDOI FINFETs clearly achieved SOI FINFETs like excellent subthreshold characteristics, low leakage current and low capacitance, while maintained...
Chemical vapor deposition (CVD) of arsenic monolayers on Si substrates are applied as a source of dopants for drive-in by high-power excimer laser annealing. By varying the laser annealing energy, the depth of the doping is controlled so that either Schottky diodes with a lowered saturation current are formed (low energy anneal) or ultrashallow n+p diodes (higher energy anneal). The transition from...
In this paper, the forward gated-diode method is used to extract the gate oxide thickness and doping concentration of MOS device simultaneously. The gate oxide thickness and body doping concentration are first extracted from the recombination-generation (R-G) current, and then from the simulation result of ISE-Dessis. The results obtained from R-G method shows a good agreement with the simulation...
This paper presents the characteristics of ideal double-gate/gate-all-around (DG/GAA) MOSFETs, including the long/short-channel and thin/thick-body effects. A unified compact model (Xsim) based on the unified regional modeling (URM) approach for the generic DG/GAA MOSFET is used to demonstrate the expected behaviors, which should be included in the core model describing such emerging devices.
A vertical pnp BJTs on thin SOI is designed and characterized by using the mixed numerical two-dimensional process and device simulator (Sentaurus). The DC, frequency, and breakdown characteristics of the vertical pnp on SOI are simulated and analyzed. The peak of β is 85 at Vbe=-0.7. The maximum of the cutoff frequency fτ for the pnp bipolar transistor on SOI attain 10.6 GHz, and the value of BVceo...
The dependence of the avalanche breakdown voltage on vertically linear doping gradient of the drift region based on Silicon-On-Insulator (SOI) lateral diffuse metal oxide semiconductor (LDMOS) is studied. Vertically linear doping profile (VD) of the LDMOS structure is exhibited to obviously improve safe of operation area (SOA) from the conventional uniform and variable linear doping structure. From...
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