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This paper presents a low-offset, low-power, high-speed comparator using bulk biasing calibration technique. The adjustment of bulk voltage is realized by analog integration in a feedback loop. The technique can calibrate the offset voltage to small value without reducing speed. The comparator is designed in a standard digital 65nm CMOS technology with 1V supply voltage. The comparator works at 1GHz...
A multiloop method is presented for highly nonlinear ring oscillators in this paper. This circuit permits lower tuning gain through the use of coarse/fine frequency control, which also translates into a lower sensitivity to the voltage at the control lines. A 8-GHz VCO in SMIC 0.18μm 1P6M CMOS technology is designed. The linear tuning range of VCO is from 7.95 to 8.45GHz with the tuning voltage vary...
This paper presents a complementary Lubistor and TFET (CLTFET) inverter, which is composed of a lateral unidirectional bipolar-type insulated-gate transistor (Lubistor) load and a tunneling field effect transistor (TFET) driver. Based on the measurement data of Lubistor and TFET devices published, we have for the first time drawn the load lines and operation point line (Q line) of the new designed...
The open-loop de-skewing circuits are traditionally used for fast clock synchronization, but they are unable to deal with the problems induced by run-time variations. This paper presents the design of a skew compensation circuit that can achieve fast lock-in and also perform maintenance operation after lock-in. This circuit is designed on top of the open-loop half-delay-line skew compensation circuit...
In this study, we propose a new technology to fabricate pseudo tri-gate vertical (PTGV) MOSFETs without p-n junctions, named junctionless PTGVMOS (JPTGV). According to numerical analysis, the excellent electrical characteristics such as subthreshold swing (S.S.) ~ 60mV/dec, Ion/Ioff ~ 1010, and low interface trap density are all achieved. The device without p-n junctions provides an easier way for...
SRAM sense amplifier plays a key role in memory design. With technology scaling to the nanometer, the device mismatch increases and the distribution effect induces unstable signal injection, thus affecting the reliability of memory system. This paper presents a new method for SRAM sense amplifier design. It incorporates reasonable delay between the passgate and enable signals to effectively mitigates...
Our research project is to design a readout IC for an ultrasonic transducer consisting of a matrix of more than 2000 elements. The IC and the matrix transducer will be put into the tip of a transesophageal probe for 3D echocardiography. A key building block of the readout IC, a programmable analog delay line, is presented in this paper. It is based on the time-interleaved sample-and-hold (S/H) principle...
This paper presents an optimized architecture of shared memory controller in packet processing multi-processor system on chip (MPSoC). The rotation priority algorithm in arbitration mechanism is ameliorated so that fairness of the memory access response and continuity of read/write commands are guaranteed. A `ping-pong' structure is adopted in SRAM interface logic which optimizes the memory data throughput...
This paper described a digitally controlled Buck converter. In this converter, the compensator implements the classic linear PID control law by the fixed-point algorithm. A proposed verification method is performed in Simulink environment. The structure of low area and power cost Ring ADC and high resolution DPWM is also introduced, respectively. The consistent mathematic and Spice simulation result...
A fast integrated gate driver with amorphous silicon thin film transistor (a-Si:H TFT) is proposed in this paper. To improve the circuit speed, a new input scheme is designed to provide a full scale pre-charge voltage. So the loss of pre-charge voltage, a challenge in the conventional designs, is avoided. Simulations show that the proposed gate driver has a much improved driving speed in comparison...
In this paper, a low-cost VLSI implementation of a pipeline fast Fourier transform (FFT) processor capable of supporting from 1k to 32k FFT sizes is presented. The radix-22/23 based pipeline structure reduces the steps of normal complex multiplications, and the single-path delay feedback (SDF) memory access method ensures a minimum (N-1) memory words to get the FFT results. As for the data-path in...
In this paper, two novel structures at 200mV 0.18um sub-threshold full adders are proposed for wireless sensor network nodes or medical electronics. They use three state gate to enhance the transition time and drivability of carry out signal. Simulation results show that the transition time of the proposed structure using three state gate is 60% of that of old structure using transmission gate. The...
An improved negative level shifter with high speed and low power consumption is presented. To reduce the switching delay and power consumption, a boost circuit is designed and additional charging current paths are introduced in the improved level shifter. The circuit has been designed in 130nm triple-well standard CMOS technology with a nominal power supply VDD of 1.5V and a negative voltage of -4...
A charge sharing clock scheme is proposed to feed a 5-stage double charge pump circuit. By reusing the charges in charging or discharging the parasitic capacitance during the pumping process, dynamic power loss is able to be reduced by nearly a half. Under 1V supply, simulation results show a maximum 10% efficiency increase, and the ripple noise is also reduced by a half comparing to the conventional...
Based on the application of high-speed, high-resolution A/D converter, this paper describes the design and implementation of a novel high-speed comparator. The comparator uses the high-speed, transmission delay stability technology, the auto-zero technology, and the cascade technology in order for the comparator to have the high-speed, high-resolution, transmission delay stability features. Its performances...
We compare the switching behavior of two classes of resistive RAMs (RRAMs), namely Cu-SiO2 based conductive-bridging-RAMS (CBRAMs) and HfO2 based Oxide-RRAMs (OxRRAMs). In both devices the ON/OFF ratios are high, the set voltage is reproducible from cycle to cycle, and the reset voltage displays large dispersion. No forming stage is required in the investigated OxRRAMs. CBRAMs offer much lower programming...
Terahertz (THZ) detection by field effect transistors (FETs) has been paid great attention in recent years. This paper outlined the numerical study of terahertz radiation detection by FETs in our group, including the fundamental THz detection model, detection model with two sources, heterodyne detection model and optical beating model. These study results demonstrated the potential application of...
This paper presents a method of multi-Scan-Enable DFT design for at-speed scan testing to improve transition fault coverage. Base on the method, we build a novel TR-TC (Test Resources-Test Coverage) associated test cost mathematical model to effectively control the complexity of at-speed DFT design and establish the optimization number of Scan-Enable, which provides a reliable target control value...
This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quasi-ballistic effects. The model incorporates the dependence of channel length, gate height and width, gate-to-contact spacing, nanowire size, multiple channels, as well as 1-D ultra-narrow...
As an important implementation of Cryptographic algorithm, processor should be thought about the ability of resistant power attack. In this paper we show a processor architecture, which automatically detects the execution of the encryption algorithms, and interleaves the execution of cryptographic algorithm code with that of dummy instructions to reduce the correlations between the leakage and the...
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