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The internal gettering (IG) of Cu contamination in Czochralski (Cz) silicon wafers has been investigated using both a conventional IG process based on high-low-high (H-L-H) annealing and a rapid-thermal-process (RTP) based magic denuded zone (MDZ) process. It is found that a denuded zone (DZ) and bulk micro-defects (BMDs) acting as the gettering sites were formed in both cases. However, after cross-sectional...
In this work, the properties of sputtered Mo/TaN bilayers and Mo-Ta single layer as diffusion barriers were investigated for Cu metallization. The experimental results show that the Mo(5nm)/TaN(5nm) stack can withstand annealing up to 600°C for 30min and the Mo-Ta(5nm) alloy barrier can effectively prevent Cu diffusion after 500°C annealing.
In this paper, a high thermal stable TaOx-based RRAM device has been fabricated with TiN as the top electrode. The fabricated device shows good endurance behavior with little fluctuations in voltages and resistance state. Due to the stability of this device, potential for MLC application was also investigated. In addition, the mechanism of the high performance of the device is analyzed with Gibbs...
This work studies the electrical and testing reliability issues of CuxO based RRAM (Resistive Random Access Memory). Firstly, we study the most important electrical reliability issue-data retention capability, and propose a filament/charge trap combined model to clarify the retention failure mechanism. Secondly, we respectively study the reliability problems caused by the SET compliance current in...
Wafer-scale three-dimensional (3D) technologies beyond post-scaling, known as Wafer-on-Wafer (WOW), have been developed for high-density integration. WOW consists of four technology modules: wafer thinning, stacking, through-silicon-via (TSV) interconnects without bump electrode pads, and packaging. All modules are carried out at the wafer scale. No degradation for advanced 35-nm SRAM logic and FRAM...
We compare the switching behavior of two classes of resistive RAMs (RRAMs), namely Cu-SiO2 based conductive-bridging-RAMS (CBRAMs) and HfO2 based Oxide-RRAMs (OxRRAMs). In both devices the ON/OFF ratios are high, the set voltage is reproducible from cycle to cycle, and the reset voltage displays large dispersion. No forming stage is required in the investigated OxRRAMs. CBRAMs offer much lower programming...
The resistance switching characteristics of Cu doped HfO2 film are investigated for nonvolatile memory. Two stable states can be achieved under both pulse and DC electrical stress. Good performances including large storage window, fast operation speed, good endurance, and long time retention are shown in this device. The metallic filament is confirmed as the physical origin for resistance switching...
ZrO2-based resistive random access memory devices composed of a thin Cu doped ZrO2 film sandwiched between an oxidizable top electrode and an inert bottom electrode are fabricated by e-beam evaporation at room temperature. The devices show reproducible nonpolar resistive switching. The formation and annihilation of localized conductive filaments is suggested to be responsible for the resistive switching...
Increasing complexity and manufacturing costs, along with the fundamental limits of planar CMOS devices, threaten to slow down the historical pace of progress in the semiconductor industry. We report herein an efficient, low-cost, "greener" way to fabricate dual-damascene copper (Cu) on-chip interconnect or Back-End-Of-the-Line (BEOL) structures using a novel multifunctional on-chip insulator,...
Two types of ReRAM are investigated. The first is a CB-ReRAM (conducting bridge ReRAM) that uses metallic ions to form the bridge. This type of device is known to be unstable because the conducting bridge tends to self-destruct. By adding a buffer layer between the electrode and the electrolyte, the retention of the Cu-based CB-ReRAM is greatly improved while the superior electrical performance is...
TaN was widely used as Cu diffusion barrier in CMOS Cu-BEOL technology, in which it was removed by CMP process. Some work was done on TaN etch by Br/Cl-based gas for metal gate application. But seldom work was done for TaN etch in CF-based gas. In this work TaN etching in CF4/CHF3 gas was investigated on CVD alpha-Si substrate for CMOS compatible MEMS/Sensor application. To avoid resist poisoning...
The thermal stability and electrical properties of Cu contact on the NiSi substrate with a Ru/TaSiN barrier stack were investigated. The Ta/Si atomic ratio of the TaSiN is varied to optimize the barrier property. The results show that by introducing certain amount of Si into the TaN film, the Ru/TaSiN structure can be both thermally and electrically stable up to 500°C annealing for 30 minutes. The...
The properties of ultrathin RuC film and RuC/TaN stack as the Cu diffusion barrier on Si substrate were studied. The results show that the thermal stability of the Cu/RuC/TaN/Si structure is better than that of the Cu/Ru/TaN/Si structure. A flush TaN layer can improve the thermal stability of RuC film and make it a more robust diffusion barrier for Cu metallization.
1T1R-architecture devices were fabricated by integrating ZrO2 based crossbar structure ReRAM onto a foundry-built MOSFET platform. Multilevel operation was realized by using the current limit of a selected cell transistor in the set process. The current level was determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the...
The diffusion barrier properties of Co/TaN bilayer as Cu adhesion layer/diffusion barrier on the Si and low k (k = 2.5) substrates were investigated. The barrier was prepared by using ion-beam sputtering technique. The barrier property was investigated by sheet resistance, X-ray diffraction (XRD), and Auger electron spectroscopy (AES) and electrical measurements. No obvious Cu diffusion and agglomeration...
The CuIn1-xGaxSe2 (CIGS) films are prepared by the selenization process including the deposition of the metal precursors followed by heating the metal precursors in a Se overpressure. The impacts of Se deposition rates on the morphology, grain growth, and atomic ratios of the resulting CIGS films are investigated. The CIGS films prepared at the high Se flow rate exhibit the improved surface morphology...
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