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Graphene, a two-dimensional carbon form with the highest intrinsic carrier mobility and many desirable physical properties at room temperature, is considered a promising material for ultrahigh speed and low power devices with the possibility of strong scaling potential due to the ultra-thin body. (Fig. 1) [1-3] Here IBM reports progress in graphene nanoelectronics, synthesizing wafer-scale monolayer-controlled...
La2O3 insulators have been prepared by ALD using La(iPrCp)3 and H2O as the source materials. We identified two necessary conditions to achieve the self-limiting growth: temperatures lower than 200°C and extremely long purging after H2O pulses. La2O3 insulators annealed at 500°C showed good MOS properties with no hysteresis and small flat-band voltage shift. Comparisons to the have La2O3 films prepared...
Nb2O5-Al2O3 nanolaminate films have been grown by atomic layer deposition using (Nb(OC2H5)5)/H2O, and Al(CH3)3/H2O precursors, respectively. Effect of rapid thermal annealing (RTA) on the optical properties of the nanolaminate has been studied using Fourier transform infrared spectroscopy (FTIR), and spectroscopic ellipsometry. From the FTIR result, Al2O3 suppresses the formation of interfacial layer...
High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages (VTH) was proposed. The Vop was reduced to be less 3 V without lowering the mobility and the ratio of on/off current using a 30 nm Al2O3 insulator film fabricated by atomic layer deposition...
In this paper we overview recent attempts at co-integrating silicon nano-electro-mechanical systems (NEMS) with nanoelectronic devices aiming to add more functionalities to conventional electronic devices in `More-than-Moore' domain and also explore novel operating principles in `Beyond CMOS' domain.
We have investigated the growth and crystalline properties of tensile-strained Ge and Ge1-xSnx heteroepitaxial layers for high-mobility channels. The low temperature growth and the large misfit strain between Ge1-xSnx and Si leads to the high density of defects such as vacancy in Ge1-xSnx layers. They effectively enhance the propagation of misfit dislocations and the strain relaxation with suppressing...
The concept of atomically controlled processing for group IV semiconductors is shown based on atomicorder surface reaction control in Si-based CVD epitaxial growth. Si epitaxial growth on B or P atomic layer formed on Si(100) or Si1-xGex (100) surfaces, is achieved at temperatures below 500°C. B doping dose of about 7× 1014 cm-2 is confined within an about 1 nm thick region, but the sheet carrier...
Point defects introduced by homoepitaxial growth of thin films on SrTiO3 substrates were studied by means of positron annihilation. The SrTiO3 films were grown by molecular-beam epitaxy (MBE) without using an oxidant. The line-shape parameter S was found to be increased by the growth of the film, which was attributed to the diffusion of oxygen from the substrate into the film, and the resultant introduction...
Atomic level Ge/SiO2 direct wafer bonding was achieved at 150°C. The microstructures of the bonding interface were characterized by transmission electron microscopy. Our investigation indicated that the completed Ge/SiO2 bonding interface without nano-gaps can be required only if the proper pretreatment was applied. That is probable reason that the high defect (a great number of pits) density on the...
In this work, two kinds of thermal annealing methods were used to process the silicon wafer by Ge ion bombardment in two steps, dose of 7×1016/cm2 with 150KeV and dose of 2.72×1016/cm2 with 50KeV respectively. In order to control the defects density and Ge distribution in SiGe layer, furnace annealing (FA) and rapid thermal annealing (RTA) schedules were used. It has been found that the FA after ion...
High-performance implant-free In0.53Ga0.47As-channel MOSFETs grown on GaAs substrates by Metalorganic Chemical Vapor Deposition (MOCVD) are demonstrated. Atomic-layer-deposited (ALD) Al2O3 was used as gate dielectric on top of a δ-doped In0.53Ga0.47As/In0.51Al0.49As metamorphic heterojunction structures grown on GaAs substrates. A 1-μm gate-length MOSFET with 15nm Al2O3 shows a maximum drain current...
By utilizing an electron-cyclotron-resonance plasma enhanced chemical vapor deposition (CVD) for low-temperature epitaxial growth of group IV semiconductors, atomically controlled plasma processing has been developed to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, recent typical achievements...
Hydrogenated microcrystalline silicon films without an amorphous incubation layer were deposited on glass substrates at a high rate and a low temperature by a jet-type inductively coupled plasma chemical vapor deposition technique. It was observed that the amorphous incubation layer present at the initial stage of the deposition gradually crystallized during the growth process, and an almost completely...
Energy bandstructures of unstrained and strained [100] silicon nanowires are calculated with nearest neighbor (NN) sp3d5s* tight binding model. Square nanowires with four {110} bounding facets of various thicknesses are simulated. It is found that bandgaps of nanowires increase with decreasing the wire thickness. Uniaxial strain effects are accounted for by displacing the silicon atoms and modifying...
We have proposed atomistic guiding principles for high program/erase (P/E) cycle endurance MONOS type memories based on first principles calculations. We found that excess O atoms near the SiN/SiO2 interfaces are the cause of memory degradation due to an irreversible structural change during P/E cycles. These results indicate that by suppressing excess O atoms the MONOS characteristics can be effectively...
The principal obstacle to III-V compound semiconductors rivaling or exceeding the properties of Si electronics has been the lack of high-quality, thermodynamically stable insulators on III-V materials. For more than four decades, the research community has searched for suitable III-V compound semiconductor gate dielectrics or passivation layers. The research on ALD approach is of particular interest,...
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