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Bridged organosilicates have recently emerged as potential ultra-low-k (ULK) candidates for the 32 nm technology node and beyond due to their superior mechanical properties. While the organic bridge provides enhanced network connectivity, the presence of terminal Si-Me groups has the opposite effect. Predicting the influence of the precursor structure and network connectivity on resulting material...
As the current-carrying capability of a copper line is reduced due to interconnect dimension shrinkage, self-aligned CoWP metal-cap has been reported to be helpful to improve degraded electromigration (EM) reliability. However, adoption of this new metal cap in general further exacerbates the already problematic low-k dielectric TDDB reliability at 32nm and beyond. This paper provides a comparative...
Capacitance coupling in copper low-k interconnects can be further reduced by implementing Air gaps in the intra-layer dielectric. This paper describes the evaluation of an integrated Air gap technology using 32 and 22 nm node technology vehicles. Electrical, reliability, and yield results are presented.
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