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Downstream electromigration (EM) study was performed to investigate the cap layer and the grain size effects on Cu EM reliability for the 45 nm technology node. Four sets of Cu interconnects were examined: large and small grains with and without a CoWP cap placed between the SiCN cap and the Cu lines. Without the CoWP cap, the EM lifetime was reduced by a factor of 1.9 when changing from large to...
We have studied key factors of Ti-based self-formed barrier technique on interconnect reliability. A performance of time dependent dielectric breakdown shows superior endurance, using quite a thin Ti-based self-formed barrier. However, to achieve a superior electromigration performance using Ti-based self-formed barrier, much more amount of Ti is needed compared with that of TDDB performance. This...
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