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The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to conventional SiCN barriers, this material demonstrates greatly reduced leakage, superior mechanical properties and better etch selectivity. Therefore, BN is a promising candidate as a low k dielectric...
A multilevel back-end-of-line structure with a dielectric constant κ ≤ 2.4 ultra low-κ materials was developed. κ=2.2 ULK build was demonstrated at a 144nm wiring pitch and a κ=2.4 ULK was demonstrated at a 288nm pitch. Good model-to-hardware correlation for the measured capacitance indicated no significant plasma damage to the ULK 2.2 material. The extracted copper resistivity was consistent with...
As the current-carrying capability of a copper line is reduced due to interconnect dimension shrinkage, self-aligned CoWP metal-cap has been reported to be helpful to improve degraded electromigration (EM) reliability. However, adoption of this new metal cap in general further exacerbates the already problematic low-k dielectric TDDB reliability at 32nm and beyond. This paper provides a comparative...
The reliable fabrication of interconnects containing ultra low-k organosilicate dielectrics (ULK) has been a significant technological challenge. ULK's are inherently fragile with reduced elastic constants. In addition, their Si-O backbone makes organosilicate films prone to moisture-assisted cracking leading to serious reliability concerns. In this study, we investigated the mechanical properties...
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