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A visible-light injection-type electroluminescence thin film diode made of amorphous silicon carbide (a-SiC TFLED) has been developed. The device has a basic structure of p (a-SiC)/i (a-SiC)/n (a-SiC). The emission color could be controlled from red to green by adjusting the carbon content x in the a-Si1-x Cx luminescent i-layer. The brightness of 5 cd/m2 was obtained for the yellow LED with a forward...
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Spreading capacitances of several MOS VLSI configurations have been calculated numerically by solvincg Poisson's equationi in 2 or 3 dimensions. Owing to nonuniform charge distributions, contributions from sidewalls and topsurfaces, and shielding effects, considerable deviations from scarce analytic formula have been found. Successively considered are the cases: 3 parallel conductors at equal height...
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The main purpose of this work is to show how with a simple analytical model of diffusion, using only R and xj experimental data, is it possible to calculate the relationship between the electrically active charge and the initial implanted dose of Antimony in Silicon. It will be shown that Qel/Qdose ≪ l in agreement with many others authors1,2,3, and a lower diffusion coefficient than that commonly...
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Processing, design, and characterization issues are discussed for advanced field-effect (FET) and bipolar transistors. Results are presented from work on N-channel FET's with gate lengths below 0.1 ??m, and on the role that polysilicon emitter contacts play in high current, high speed bipolar devices. For FET's over 750mS/mm transconductance was achieved at liquid nitrogen temperature operation. In...
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Diffusion and solubility of gold implanted in ≪100≫ p-type silicon have been investigated by Rutherford Backscattering Spectrometry and spreading resistance techniques. The gold concentration profiles are U-shaped and the concentration at the middle of the wafer thickness (Csm) is proportional to the square root of the diffusion time in agreement with the kick-out mechanism. The diffusion coefficient...
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The feasibility of using InP: Fe photoconductive devices as high-speed microwave switches has been demonstrated in the 0.01 - 10 GHz frequency range, by fabricating a fiber optic compatible modified interdigitated gap (MIG) structure. Rise and fall times of less than 100 ps have been measured and a power switching ratio (PSWR) of 13 dB at 10 GHz has been achieved when illuminating the device with...
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Buried heterostructures (BH) lasers are made from low threshold current density (1.7 kA/cm2 at 1.5μm) GaInAsP/InP double heterostucture (DH) grown by Gas Source Molecular Beam Epitaxy (GSMBE) and using a standard LPE regrowth fabrication process. Low threshold current (25 mA), high quantum differential efficiency (43%) BH lasers emitting at 1.5μm have been obtained. Due to the very good homogeneity...
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We summarize here, our present understanding on the mechanisms of formation of oxide films grown on silicides by room temperature plasma anodization. The studies of the oxygen ions and cations transport processes during the plasma oxide growth on silicides of various refractory metals (Zr, Hf or Ta) and rare earths (Gd, Sm) were carried out using a combination of nuclear reaction analysis, Rutherford...
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This. paper presents the preliminary results obtained in the development of large area p-i-n diodes to be used as particles and radiatiorn detectors in high-energy physics experiments. Large area room-temperature operated silicon detectors widen the potential field of application for solid state detectors in high-energy physics. Large equipments, like electromagnetic and hadronic calorimeters, could...
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This paper presents a high performance Complementary Buried Channel FET device isolated by high quality silicon dioxide layer using Silicon wafer Direct Bonding technology (SDB/CBCFET). The structure and operational principle of this device is discussed. The properties of an improved SDB process is investigated. By means of 2D numerical simulation, effects of interface charge density of bonding interface...
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A GaAs-AlAs superlattice grown on an-undoped GaAs substrate has been implanted with 300 keV protons to a fluence of 1E16/cm2. The implanted hydrogen and the deposited Al atoms have been depth profiled using secondary ion mass spectrometry (SIMS). Measurements of the as-implanted sample show that the hydrogen depth distribution is similar to that found previously with proton implants into bulk GaAs...
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The accurate simulation of implanted and diffused impurity profiles in silicon is extremely important when developing VLSI processes. In this work simulations with different process simulators and the corresponding experimental results for implantation and diffusion in N2 ambient of boron in silicon are compared. Our study reports a remarkable dose dependence of the shape of the experimental profiles...
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The effect of high pressure steam oxidation (7.5-10.7 atm.) on phosphorus extrinsic diffusion in (111)--and (100)--silicon ac 700?? - 970??C has been examined by spreading resistance probes and ellipsometery. It has been found that the OED and ORD appear at the higher nd the lower temperature, respectively. The OED-ORD transition point is at about 880??C for 40' in 7.5 atm. for (111)-silicon. The...
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The anneal behavior of Be implantations into undoped InP was studied using a capless, rapid thermal annealing (RTA) process. It is shown that shallow p-type layers in InP can be obtained reproducibly making this process suitable for device fabrication. Maximum hole concentrations and minimum in-diffusion are observed for anneal durations of about 1 minute. Out-diffusion of implanted Be is identified...
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An Insulated Gate Bipolar Transistor design based on bulk silicon material capable of blocking voltages in excess of 1500V is reported. The device incorporates a detailed anode shorting pattern which inhibits hole injection during on-state, and reduces turn-off times.
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A method is presented that allows the determination of the carrier density in semiconductor lasers above and below threshold. This method is based on a line shape analysis of the spontaneous emission. Corresponding gain values can be calculated from the carrier density. Temperature dependent measurements of the spontaneous emission and the differential quantum efficiency allow the determination of...
