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Electroabsorption properties of 1.3mum InAs/InGaAs/GaAs quantum dot electroabsorption modulator (EAM) are investigated. Onset of absorption to higher electric field suggests the potential to achieve higher optical power handling capability than conventional EAM.
Relaxation and emission dynamics of a dense quantized magneto-plasma excited by intense femtosecond laser pulses in In0.2Ga0.8As/GaAs multiple quantum wells are probed by time-resolved transient absorption and time-resolved photoluminescence experiments in high magnetic fields.
We demonstrate second harmonic generation from a single GaAs nanoneedle with a wurtzite crystal structure. The optical anisotropy of the polar crystal results in strong nonlinear optical conversion compared to normal zincblende GaAs.
We report an experimental study of pulsed Raman gain in As2Se3 chalcogenide fiber, for pump pulses between 1470 nm and 1560 nm, achieving the highest Raman gain at the longest pump wavelength, where two-photon absorption is lowest.
O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
A comprehensive theory of couplings between a cavity and different charge configurations in a quantum dot is developed. It is shown that the quantum anti-Zeno effect is essential for the results obtained by QED experiments. The quantum dynamics of the system employing the quantum master equation is analysed. A Stansky-Krastanov InAs QD grown on a GaAs substrate was assumed, and the only first confined...
Ultrafast density-dependent optical spectroscopic measurements on a quantum dots-in-a-well heterostructure reveal several distinctive phenomena, most notably a strong coupling between the quantum well population and light absorption at the quantum dot excited state.
We report GaAs-based transverse-junction-superluminescent-diodes, characterized as transverse-carrier-flow spread in quantum wells horizontally instead of vertical well-by-well injection. These devices overcome the problem of non-uniform-carrier-distribution and operate at a bio-optical window of 1.1-mum wavelength regime.
Spin-polarized electron transport in GaAs is studied with emphasis on the role of holes. Sub-picosecond ac spin current pulses are produced and ambipolar spin diffusion are studied, both dominated by space charge field of holes.
The heat dissipation time in an InP-based photonic crystal nano-cavity was measured. Our method is based on time-resolved reflectivity of a cw beam coupled through a tapered fiber. Dissipation times around 2 mus were obtained.
We have investigated the fabrication and characterization of 3-dimensionally confined optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes. Such microcavities on Si are free of defects and exhibit a Q-factor of 3,000.
The optical gain dynamics in an InGaAs/AlInAs quantum cascade laser is studied by midinfrared pump-probe experiments and electro-optic sampling. We find an extremely fast gain recovery time of <1 ps.
We demonstrate a surface-normal modulator based on free-carrier effect in GaAs and phase-to-amplitude conversion coupling to a single mode fiber. Operation over 1200-2400 nm, modulation depth up to 43% and frequency up to 270 MHz is observed.
We present terahertz emission from nonpolar InN due to carrier transport in stacking fault-related internal in-plane electric fields. Evidence of in-plane transport is observed as a terahertz waveform polarity flip with reversal of the c-axis.
We used pump-probe technique to investigate recombination dynamics of photogenerated carriers in photodiodes consisting of InAs/GaInSb W-structured superlattices. Recombination time constants of 1.6 ns and 10 ns were measured under high and low powers, respectively.
This paper discusses the optical characteristics of a nonpolar a-plane InGaN/GaN quantum well (QW) with different indium compositions, QW well widths, and injection carrier densities. We find that the larger indium composition and smaller well width make the energy separation of |Yrang-like state to |Zrang-like state larger, and as a result enhance the polarization ratio of light. However, the polarization...
Temporal characteristics of band-edge photonic crystal lasers were explored with high resolution up-conversion system. The InGaAs/InP photonic crystal laser operates at room temperature at 1.55 mum with temporal responses indicating modulation speeds greater than 25 GHz.
We realize a new scheme for making a direct contact to a two-dimensional (2D) nanorod LED array using the oblique-angle deposition. More importantly, we demonstrate highly efficient carrier injection into the nanorods.
We present a polarization-insensitive, electrically tunable metamaterial operating at terahertz (THz) frequencies and demonstrate the fast modulation of a propagating THz wave. The structure is composed of gold crosses on n-doped gallium arsenide (GaAs).
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