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The material dependence of NBTI in SiON p-MOSFETs is studied using the UF-OTF IDLIN method. It is shown that the N density at the Si/SiON interface plays a very crucial role in determining the magnitude as well as the time, temperature and field dependence of NBTI. The relative contribution of interface trap generation and hole trapping to overall degradation is qualitatively discussed.
Off-state leakage current in a 65 nm partially depleted (PD) floating-body (FB) SOI technology is modeled and analyzed with emphasis on its drain-voltage dependence. Modeling accuracy of the off-state leakage current is highly dependent on modeling of parasitic currents, although their direct contribution to the leakage may be negligible in lower-power/high-performance technologies. The underlying...
In this paper, we proposed a polysilicon (poly-Si) wire based biosensor for the detection of glucose and matrix metalloproteinase (MMP) extracted from cancer cells. A focus-ion-beam (FIB) processed capillary atomic-force-microscopy (C-AFM) tip was used to help for transferring trace amount of glucose and MMP solutions onto the exact position of the surface of the poly-Si wire sensor. Glucose solution...
Si surface properties and electrical characteristics in n- and p-MOSFETs with 2 - 6 degree tilted off-axis (110) channel were reported. The transconductance of p-MOSFET with off-axis channel was significantly degraded compared with that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved compared with that of normal channel. The changes were larger than those observed...
We investigated the growth of crystalline ZrO2 film prepared on p-Si(100) by limited reaction sputtering system under different growth temperatures from 400 to 700??C. The structural characteristics of the samples were studied by XRD, RHEED and AFM, which provided a solid identification of the phase transformation from monoclinic phase to tetragonal phase. The dielectric properties were studied by...
300 mm silicon single crystals have been grown using 24-28?? hot zones with the aid of numerical simulation. Mechanical strength of silicon seeds has been tested and a new style seed chuck developed. The damage layers during cutting, double side grinding (DSG) and double side polishing (DSP) have been investigated. The processing technology and the defects in silicon based materials such as silicon...
We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high...
The fabrication of Germanium-On-Insulator (GeOI) by wafer bonding and ion-cut approach was investigated. With cyclic HF/DIW cleaning and N2 plasma surface activation, large-area layer transfer of GeOI substrates was realized by ion-cut processes with bulk Ge wafer as the donor wafer. The GeOI substrates are thermally stable up to 550??C annealing and surface roughness can be smoothed down to 0.3 nm...
Capacitor composed of single crystalline Gd2O3 on Si(100) with Pt top electrode was fabricated by molecular beam epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd2O3/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function...
GaN/AlGaN device technologies are reviewed aiming at the applications to power switching systems. SL (Super Lattice) capping and QA (Quaternary Alloy) over-layer techniques have been developed to reduce the on-resistance of GaN/ AlGaN HFET. Further, we achieved GaN on Silicon epitaxial growth technology with almost the same mobility keeping the same 2DEG density, which will make the cost comparable...
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon...
Practical aspects of synthesis and applications of single-wall and multi-wall carbon nanotubes (SWNT and MWNT, respectively) are presented. Among numerous potential applications, utilization of nanotubes for interconnections in microelectronics and in gas sensors is considered in more detail. The issues related to compatibility of nanotubes synthesis and manipulation processes with the Si planar technology...
A quasi two-dimensional conduction model based on the thermionic emission of charge carriers over the energy barriers at discrete grain boundaries is proposed. The grain boundaries are characterized by an energy-dispersed density of trap states and a conduction model is formulated for a polycrystalline silicon thin-film transistor with an intrinsic channel. A ??line?? charge is formed adjacent to...
In this paper, the materials, processing and device characteristics of flexible Si CMOS on plastic substrates are reviewed. The methods to create transferrable single-crystal Si nanomembranes are described first followed by the description of doping and transfer techniques developed for the nanomembranes. The preliminary device characteristics of CMOS and inverters on plastic substrates are presented.
The transport characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with radius of 5 nm have been investigated. Mobility was estimated by extracting of source/drain resistance.
In this paper, experimental studies on the carrier transport in silicon nanowire transistors (SNWTs) are reported, demonstrating their great potential as an alternative device structure for near-ballistic transport from top-down approach. Both ballistic efficiency and apparent mobility were characterized. A modified experimental extraction methodology for SNWTs is proposed, which takes into account...
In this paper, an accurate and efficient one dimensional self-consistent numerical solution of <100> uniaxially strained n-MOS structure is presented based on finite element method. The solution is developed using FEMLAB considering wave function penetration effect into gate oxide. Significant change occurs in the eigen energies and the electron occupancies, intrinsic carrier concentration,...
Heterogeneous integration of high quality germanium and compound semiconductors onto large-size low-cost substrates holds great promise to improve the performance and functionality of silicon-based CMOS logic beyond Moore??s Law, as well as to reduce the cost of compound semiconductor-based devices and circuits. In this article, the Aspect Ratio Trapping heteroepitaxy technique, a recently developed...
UV laser excited microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes (FSSMs), which can be applied to the fabrication of high performance radiofrequency (RF) power amplifier. The FSSMs were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure...
We have found that effective work functions of high-work function gate metals (p-metals) become small and Fermi level pinning of gate metals occurs after high temperature treatment as the same in the case in p+poly-Si gates. On the contrary, intrinsic hybridization between metal and high-k wave function at the interface is crucial factor to determine effective work function of gate metals after low...
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