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Recent experiment shows that scandium (Sc) can make a good performance contact with carbon nanotube (CNT) to fabricate n-type field effect transistor (n-FET). In this paper, we study the Schottky barrier (SB) of scandium (Sc) and palladium (Pd) with a (8,0) single-wall CNT (SWCNT) using first-principles calculation. We find that the p-type SB height (SBH) of the Pd-CNT contact is about 0.34 eV which...
This paper discuss the characterization and the performance of two types of ISFET, which have different gate design. Isfet5 has single gate while Isfet7 has multi-finger gate. The characterization of ISFET is analyzed from the IdVd and IdVg curve, and by measuring the threshold voltage, Vth and response-time of ISFET in order to determine the sensitivity of ISFET. Beside, the hysteresis of ISFET is...
The resistive switching behavior of Ag/Si3N4/Pt device was observed and studied for the first time. Resistance ratio larger than 4*102 and 104s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si3N4/Pt devices.
This paper is an overview of the status of the present and future techniques used in DNA sensing. The fundamental concepts and principles of DNA chemistry are presented. Utilizing these concepts in DNA sensing are explained for the different techniques.
In this paper, a novel adaptive front-end circuit for measuring liquid conductivity is proposed. To deal with the chemically active environment around the sensor electrodes, the dc component of the excitation signal is set to be zero. The proposed system is able to generate a symmetrical excitation signal with a single power supply even when one terminal of the sensor electrode is grounded. The use...
The paper describes integrated CMOS-MEMS technology and its applications. We discuss the features of integrated complementary metal-oxide-semi-conductor-microelectromechanical systems (CMOS- MEMS). The prospect of this integration is also presented. A MEMS fingerprint sensor and a low-voltage radio frequency (RF) CMOS-MEMS switch are the case studies discussed. In conclusion, it is confirmed that...
Capacitor composed of single crystalline Gd2O3 on Si(100) with Pt top electrode was fabricated by molecular beam epitaxy. We present a systematic study of electrical properties of as-grown single crystalline Pt/Gd2O3/Si(100). Three capacitors with different thickness are used for electrical evaluation. The EOT of the samples are estimated to be 0.7 nm, 1.2 nm and 1.8 nm respectively. Work function...
In this paper fabrication of high power light emitting diodes (LEDs) with combined transparent electrodes on both P-GaN and N-GaN have been demonstrated. Simulation and experimental results show that comparing with traditional metal N electrodes the efficacy of LEDs with transparent N electrode is increased by more than 10% and it is easier in process than the other techniques. Further more, combining...
The formation characteristics and the effect on electrical behavior of the nanoparticles caused by the interfacial redox reaction are investigated in single-layer organic memory devices with a structure of Al(aluminium)/2-amino-4,5-dicyanoimidazole (AIDCN)/indium tin oxide (ITO). It is demonstrated that the AIDCN/ITO interface is crucial for the electrically switching behavior, where SnOx nanoparticles...
The paper describes the newest layouts and the basic properties of pyroelectric single-element detectors which are built on the basis of lithium tantalate. The research aimed to develop detectors with a signal-to-noise ratio that is high as possible thereby ensuring optimum adjustment of the detectors to their planned application. Typical applications for the two new detector designs can be found...
This paper discusses a smart temperature sensor system that comprises of a high performance quartz tuning fork temperature sensor, interface with CMOS circuitry and control algorithm for reconfiguration. The ideal thermo-sensitive cut for quartz tuning fork resonators is analyzed with the theory. The specific cut quartz tuning fork was fabricated using photolithography and the etching technology....
A novel digital microfluidic device using the high dielectric constant material P(VDF-TrFE) (poly-vinylidene fluoride-trifluoroethylene) as the dielectric layer fabricated by spin-coating process is proposed. The device is featured with the advantages of both low driving voltage and IC compatible process. The dielectric constant of P(VDF-TrFE) is measured as high as 11.6. The contact angle between...
Practical aspects of synthesis and applications of single-wall and multi-wall carbon nanotubes (SWNT and MWNT, respectively) are presented. Among numerous potential applications, utilization of nanotubes for interconnections in microelectronics and in gas sensors is considered in more detail. The issues related to compatibility of nanotubes synthesis and manipulation processes with the Si planar technology...
Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. The effect of heat dissipation via the underlying substrate is studied using different experimental configurations. Scanning electron microscopy (SEM) techniques are utilized to study the structural damage by current stress. While the measured maximum current density in the suspended...
The resistance switching characteristics of several metal oxides has been reported recently for nonvolatile memory applications (NVM). However, various issues such as the switching mechanisms, switching uniformity, scalability and reproducibility have not yet been solved. In this paper, we discuss the recent progress of switching mechanisms and switching behaviors of various materials.
Scalable elements that can be switched between widely-separated non-volatile resistance states at very low power are desirable for applications in next generation memory and logic. One promising approach involves the use of solid ion-conducting films. A mobile metal ion-containing glassy electrolyte film sandwiched between an oxidizable metal layer and an inert electrode constitutes a device which...
Binary metal oxide TiO2 and HfO2 based resistance switching random access memories were fabricated. The resistance switching mechanisms were studied in terms of percolation processes. Two different switching behaviors were identified by fitting the voltage/power distributions into the Weibull model. Corresponding models were proposed to help better understanding of the resistance switching mechanisms.
This paper shows that that H plays a role in the forming of oxide RRAM which is derived from studies of both the electrical and physical properties of the oxides. Going forward, there is a clear need for additional studies that combine careful physical and electrical characterization of oxide and sulfide RRAM devices, as electrical measurements alone are ambiguous. If a thorough understanding of the...
A fully integrated bio-chip targeting at electrical selective assembly of charged nano-particles is proposed and designed in SMIC 0.18 ??m CMOS mixed signal process. The proposed circuit integrates the electrode array, potentiostat circuit, and logics on a single chip, and provides a rail-to-rail range of assembly voltage, a potential resolution of 9 bit, and a maximal assembly current up to 0.46...
Based on the 4-channels neural signal regeneration system which was realized by using discrete devices and successfully used for in-vivo experiments of rats and rabbits, an integrated circuit (IC) with 6-channels of neural signal regeneration has been designed and realized in CSMC??s 0.6 ??m CMOS technology. The IC consists of a neural signal amplifier with adjustable gain, a buffer stage, and a function...
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