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CdSe QDs in sol-gel films are promising for nonlinear optical waveguide devices. We measured the two-photon absorption (TPA) coefficient at 820 nm in such films, and TPA-induced fluorescence over the 730-980 nm wavelength range.
We report on strong coupling between a discrete optical mode of a high-Q micropillar cavity and single excitons of self assembled In0.43Ga0.57As quantum dots and compare the results with previous studies on In0.3Ga0.7As quantum dots.
We demonstrate for the first time the low penalty cascaded performance of a 1.3mum QD SOA. Eleven passes are feasible for 10Gb/s data while maintaining a Q-factor exceeding 6 for filter-free operation.
The following topics are dealt with: The following topics are dealt with: exotic nonlinear optical phenomena; periodically poled materials; nonlinear processes in microstructured fiber; grating feedback lasers; instrumentation and diagnostics; optical frequency metrology; mode-locked sources; cellular sensing; molecular sensing; terahertz plasmons; metamaterials; optical signal processing; waveguides...
We demonstrate an on-chip toroidal microcavity nanocrystal quantum dot laser with a threshold energy below 10 femto-Joules at room temperature, a factor of 1 million lower than previously reported for strongly-confined, nanocrystal quantum dot lasers.
Time-resolved mid-infrared-pump, optical-probe differential transmission spectroscopy directly reveals electron dynamics in n-doped quantum dots infrared detector structure. Capturing and intradot relaxation time were measured. Nanosecond-scale dynamics in the n=1 state was also observed.
We have measured time-resolved spontaneous emission from quantum dots in 3D photonic crystals. Due to the spatially dependent local density of states, the distribution of decay rates varies strongly with the photonic crystal lattice parameter.
Preliminary measurements of the electron spin relaxation rate (T1) in charged GaAs quantum dots are made using a nonlinear optical phase-modulation spectroscopy technique. T1 approaches 46 musec at zero magnetic field.
Optical characterization of a novel type of semiconductor microcavity based on a fully-buried, all-epitaxial design reveals many properties essential for a manufacturable technology. We demonstrate detailed mode-imaging, lasing, as well as a sizeable Purcell effect.
Electronic and optical properties of self-assembled InN/GaN quantum dots are investigated using a tight-binding model combined with full-configuration interaction calculations. Multi-exciton spectra are discussed. Dark exciton and biexciton ground-states are found for small quantum dots.
We report lateral quantum coupling between two self-assembled InGaAs/GaAs quantum dots. Single-photon photoluminescence emission has been observed from this quantum dot molecule and the level of coupling can be controlled using a static electric field.
We studied excited states of excitons and biexcitons in CuCl quantum dots by infrared transient absorption measurement. We successfully obtained their absorption spectra clearly to discuss the specific excited states of the confined biexcitons.
We obtained very bright light emission from CdSe quantum dots (QDs) by using surface plasmon coupling. Both the photoluminescence intensities and decay rates are dramatically increased when QDs are located on evaporated gold films.
Low temperature, polarization-resolved, magneto-photoluminescence studies of individual CdSe nanocrystals reveal a Zeeman splitting of spin-up and spin-down excitons in a subset of nanocrystals that have their wurzite-c axes aligned parallel to the applied field.
We observed highly non-thermal features from the photoluminescence of InGaAs/GaAs quantum dots in a planar microcavity. The effect was interpreted in terms of the interplay of phonon relaxation and cavity-dependent excitonic radiative recombination.
We demonstrate the operation of a novel quantum dot, optically gated, field-effect transistor as a photon detector. The device is shown to exhibit single-photon sensitivity, a linear response, and an internal quantum efficiency of ~73 %.
Direct measurement of the absorption of an ensemble of InGaAs quantum dots using a heterodyne multibounce technique reveals that the saturation fluence decreases dramatically with decreasing temperature. The dependence is attributed to homogeneous linewidth narrowing.
Homoepitaxially grown InAs quantum dot structures were transferred to Si substrates using oxidation lift-off technology accompanied by direct hydrophilic bonding with Si. Electroluminescence with injection through the substrate and photoluminescence data are presented.
We studied visible EL from size-controlled silicon quantum dots with diameter of 8 nmplusmn1 nm fabricated by VHF plasma decomposition process. We observed EL from nc-Si quantum dots with applied voltage above 12 V.
We use polarization tomography to demonstrate for the first time entanglement between photon pairs from the biexciton radiative cascade. The entangled pair violates Bellpsilas inequality and satisfies Peres criterion by more than 3 standards deviations of the experimental uncertainty.
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