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We demonstrate a 2.3 mum emission at RT under quasi-CW operation from a Sb-based monolithic VCSEL. The structure is composed of 2 n-doped AlAsSb/GaSb DBR, a type-I GaInAsSb/AlGaAsSb QWs active region and a tunnel junction.
We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
We present the concept and first results of a continuous wave room temperature operating electrically pumped GaSb-based VCSEL with buried tunnel junction as current aperture. Laser emission has been achieved at 2.3 mum.
We report on a first successful operation of current-driven GaN photonic-crystal surface-emitting laser, which can operate in blue-violet wavelength regions at room temperature.
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).
We report fabrication of GaN-based two-dimensional surface emitting photonic-crystal lasers and successful demonstration of lasing action at room temperature with the emission wavelength at 424.3 nm and a low threshold pumping energy density of 3.5 mJ/cm2.
We developed 1.1-mum-range oxide-implant VCSELs with InGaAs/GaAsP strain-compensated MQWs. 25 Gbit/s-100degC error-free operation and high reliability over 3000 hours under 150degC operation were successfully demonstrated.
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