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An InGaN/GaN thin-film light-emitting diode with the photonic crystal (PhC) on the surface and a TiO2/SiO2 omnidirectional reflector on the bottom was fabricated and found the line-width emission spectrum of 5 nm by the PhC.
We present time-resolved photoluminescence on InGaN/GaN multiple-quantum well LEDs grown on nonpolar and semipolar bulk GaN substrates and investigate increasing indium concentrations toward higher power, longer wavelength light emitters.
We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.
We demonstrate the reduced spectral blue shift in increasing injection current of an InGaN/GaN quantum-well light-emitting diode with prestrained growth and show that this effect is stronger when the prestained GaN barrier layer is thinner.
We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.
A hexagonal array of sub-micron sized holes was fabricated on InGaN/GaN quantum-well light-emitting diodes using nanoimprint lithography. Photoluminescence measurement confirms that light extraction of the LED was enhanced with two-dimensional photonic crystal patterns.
We observe the enhancement of photoluminescence excitation through the coupling of an InGaN/GaN quantum well (QW) with surface plasmons which are generated on an Ag nanostructure deposited on the SiN-coated QW epitaxial sample.
Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum efficiency (EQE) of the LEDs at 20 mA increased by 12.9% because of the roughening of the passive region which enhanced the escape cone.
Broadband THz pulses have been generated from InGaN/GaN multiple quantum wells pumped by a frequency-doubled sub-picosecond laser amplifier at 395 nm. Enhanced THz emissions are strongly correlated with reduced photoluminescence intensities.
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