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Single-electron transistors (SETs) are promising as future functional elements in LSIs, because of their low-power consumption and small size. Whereas, the low driving capability, the lack of compact model, and the oscillating Id-Vg characteristic of SETs make it difficult to use them in LSIs as alternatives of advanced MOSFETs. However, in ubiquitous era, LSIs are expected to be widely used not only...
This work reports on the fabrication, characterization and modeling of single electron transistor behavior in gate-all-around silicon nanoscale MOS devices. Polysilicon-gated nanowire transistors with triangular cross-sections, ranging from 20 to 250nm are fabricated by an original isotropic etching technique resulting in localized-SOI on bulk-Si wafers. Low temperature (T<20K) characteristics...
A simple technique for monitoring floating gate (FG) charge gain/loss with elementary charge accuracy is proposed. The technique does not require nanoscale FG or low temperature and can be applied to virtually any submicron FG memory cell. The potential applications include precise capacitance measurements, as well as analysis of program, erase, disturb and data retention characteristics of FG memory...
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