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The authors report for the first time a high performance Schottky-barrier S/D transistor with strained-Si/SiGe multiple-quantum-well channel (MQW-SBT). Through dopant-segregation at Ni-silicide/Si interface and utilizing the smaller bandgap of channel materials, Schottky-barrier height was modulated resulting in Phib (to electron) ~0.13eV in n-MOS and Phib (hole) ~0.086 eV in p-MOS. This enhanced...
In this paper, the authors study experimentally and numerically the Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes and its implications to Schottky-barrier (SB) source/drain p-FETs. The authors demonstrate that hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which leads to a substantial gain of the drive current in the long-channel...
An extensive gate-length (LG) dependent electrical characterization of silicon nanowire (NW) field effect transistors (FET) is presented here. Catalytically-grown and nominally undoped Si-NWs were integrated as the active region of FETs, upon which fully silicided Schottky source and drain contacts were fabricated. The length of the active region was shortened by a desired value, through the lateral...
A novel asymmetric Schottky tunneling source MOSFET is proposed in this paper. The main feature of this device is the concept of gate controlled Schottky barrier tunneling at the source. The STS MOSFET was fabricated using conventional processes combined with present NiSi technology. The device shows excellent short channel immunity, compared to conventional SOI MOSFETs. This improves the scalability...
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