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On-chip hybridization of very low concentrations of single-strand DNA targets has been detected by RF electrical measurements of interdigitated aluminum electrodes covered by Al2O3 and gold nano-labels around which silver precipitation is performed for signal enhancement The extraction procedure is based on the detection of the interdigitated capacitor self-resonance frequency through the wideband...
In this work, the authors evaluate the potentialities of HfAlO materials as possible candidates for the interpoly dielectrics of future flash memory devices. HfAlO single-layer and oxide/HfAlO/oxide triple-layer stacks were processed and analyzed in terms of coupling and insulating capabilities. The electron conduction modes in these materials, at different temperatures, were also investigated. Finally,...
New ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film was successfully developed for DRAM capacitor dielectrics of 60nm and below technologies. ZAZ dielectric film grown by ALD has a mixture structure of crystalline phase ZrO2 and amorphous phase Al2O3 in order to optimize dielectric properties. ZAZ TIT capacitor showed small Tox.eq of 8.5 Aring and low leakage current density of 0.35fA/cell, which meet leakage...
Generation-recombination noise from dual channel MOCVD-grown AlGaN/GaN/AlGaN/GaN HEMTs on sapphire substrate was observed. Local levels with activation energies Ea = 140 meV, Eb= 188 meV and Ec = 201 meV were identified. Devices showed reasonably low values of Hooge parameter (1.06 times 10-4) at room temperature in addition to superior transistor characteristics. The device performance compares favorably...
This paper deals with the investigation of mechanisms leading to a degradation of the electrical properties of titanium nitride - aluminum oxide - titanium nitride capacitors at high temperatures. Several degradation mechanisms could be identified by thorough electrical and physical characterization. The findings will serve as a future guide to build thermally stable MIM capacitors
Continued shrinkage of floating gate devices requires scaling of the tunnel and/or interpoly dielectrics. This leads to increasing leakage currents that jeopardize the nonvolatile memory retention requirements. High-k materials are natural candidates to enable further scaling of the tunnel/interpoly dielectrics. In this paper, we present an analysis of the defects in Al2O3-based stacks. It is found...
AlGaN/GaN power high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a Si substrate were presented for high power switching applications. In order to investigate the effects of an Fe-doped GaN buffer on device characteristics, HEMT devices with an Fe-doped GaN buffer on Si were fabricated alongside with the conventional devices utilizing an unintentionally doped (UID) GaN buffer...
AlN contour-mode vibrating RF MEMS resonator technology is described as capable of low-loss filtering and frequency synthesis for next generation wireless devices. Contour-mode piezoelectric resonators can span frequencies from 10 MHz up to few GHz on the same silicon chip offering high quality factors in air (1,000-4,000) and low motional resistance (25-700 Omega). Low loss (<- 1.5 dB) electrically...
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