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It is known that Ge condensation is achieved by thermal oxidation of the SiGe layer whereby Si oxidizes faster as compared to Ge, and the Ge atoms are rejected from the oxide into the SiGe layer below. As the Ge diffusion and accumulation varies with gas flow and temperature, detailed investigations are carried out and process conditions are optimized in this work. The accumulation and diffusion mechanism...
In this work, we investigate the effects of oxidation temperature and annealing on Ge movement, and amorphization as an undesirable consequence of inappropriate lowering of temperature during Ge condensation. Possible mechanisms, solutions and implications are presented and it is shown that SiGe with up to 60% Ge can be obtained with oxidation and annealing at a high temperature of 1050degC
Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented
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