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Diode and ferrite phase shifters, accenting performance and costs, will be covered by the panel. Additionally, high-power and low-power phase-shifter and driver designs, applicable in the various frequency bands, will be discussed.
The following problems will be probed by the panel. Comparison of IGFETs with bipolar transistors for LSI. The state-of-the-art for N-channel, complementary nitride and other gate insulators and substrates. Applications in memories, shift registers, and other digital and linear circuits.
A discussion emphasizing fundamental concepts and limiting factors of various approaches of converting DC to RF microwave power. Also examined will be system requirements.
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