This paper examines a number of techniques for junction temperature estimation of silicon carbide (SiC) <sc>MOSFET </sc>s devices based on the measurement of temperature sensitive electrical parameters for use in online condition monitoring. Linearity, sensitivity to temperature, and circuit design for practical implementation are discussed in detail. A demonstrator based on the measurement of the quasi-threshold voltage, the turn-<sc>on</sc> transient characteristic ($di/ dt$), the <sc>on</sc> -state voltage, and the gate current peak is designed and validated. It is shown that the threshold voltage, the estimation of the gate current peak, and the <sc>on</sc>-state voltage have potentially good sensitivity to temperature variation and linearity over a wide operating range. Very low sensitivity to temperature is shown for $di/ dt$. The proposed method can provide a valuable tool for continuous health monitoring in emerging applications of SiC devices to high-reliability applications.