This paper investigates the concept of using depletion-mode n-channel MOSFET (D-MOS) as RF transmitter/receiver switch. A new TCAD modeling methodology to analyze large-signal GHz-range T/R operation of MOS transistors is developed. The D-MOS offers a significant reduction in RON and COFF over the widely used enhancement-mode MOSFET (E-MOS). An excellent figure of merit (RON×COFF) of 134 fs can be achieved(roughly 3X improvement over E-MOS).
Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.