This paper presents an X-band 6-bit phase shifter using active bi-directional double-pole, double-throw (DPDT) switches. The phase shifter is implemented in a 130-nm SiGe BiCMOS technology. Three additional tuning bits are included in the design to achieve accurate phase shifting performance. The phase shifter demonstrates a > 11.5-dB gain in both directions of operation over the 8–12 GHz frequency range, with an RMS amplitude error < 0.9 dB, an RMS phase error < 2.2°, a return loss > 10 dB and an input-referred 1 dB compression point of −15 dBm. The circuit has dimensions of 2.6 × 1.5 mm2, including pads.