The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS technologies continue geometry scaling the designers can benefit using dedicated SPICE MOSFET models and apply specific analog design methodologies. The EKV was developed especially to meet altogether the analog/RF design requirements. This paper describes a basic set of the DC parameter extraction steps for the EKV 2.6 model. The free open source software (FOSS) Profile2D tool was used to illustrate accurate EKV 2.6 DC extraction strategy.
Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.