Single element InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 are demonstrated. A peak radiance of 2.2 was measured corresponding to an apparent temperature greater than 1350 K within the 3–5 band. A 48 pitch, 512 512 individually addressable LED array was fabricated from a nominally identical SLED wafer, hybridized with a read-in integrated circuit, and tested. The array exhibited a pixel yield greater than 95%.
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