In this communication, synthesis of high quality and length controlled Te nanowire arrays directly grown on silicon substrate with and without the coating of seed layer by a facile hydrothermal method was reported. The most preferential orientation of tellurium NW's was found along [001] through micro structural investigation. Field emission properties of as grown and annealed under Ar: H2 reduction atmosphere are studied meticulously. The emission current density of vacuum annealed Te nanowire arrays was found to be 25μA/cm2 at 3.0 V/μm.