In this paper we demonstrate superior NBTI reliability of SiGe pFETs with ultra-thin EOT in a Replacement Metal Gate (RMG) process flow, and in a SiGe channel bulk pFinFET architecture. Moreover, we investigate the Forward Body Bias (FBB) technique showing that it can very efficiently improve the SiGe device ION without compromising the NBTI reliability, or vice versa further improve the device reliability without compromising the ION. Based on the insights provided by the Body Bias experiments, we propose a model for the superior SiGe NBTI reliability which can explain all the experimental observations.