Without requiring noble metal electrodes and expensive dielectric materials, a low-cost metal–insulator–metal (MIM) capacitor processed at 300 has been developed using laser annealing and a nickel fully silicided (Ni-FUSI) amorphous silicon bottom electrode. A high capacitance density of 31 , along with low electrode resistivities, was achieved. At 25 , this MIM capacitor also displays a good leakage current density of at 1 V. From X-ray diffraction measurement results, the dielectric constants of have been enhanced by KrF excimer laser annealing with different energy values due to hexagonal or orthorhombic phase formations that increase capacitance densities. Predicted 10-year of 0.8% is achieved at 1-V operation. The time-dependent dielectric breakdown (TDDB) characteristics also meet the 10-year lifetime criteria within the operation voltage range. Both the and TDDB characteristics have tradeoff relationships with the capacitance value. The combination of the improved dielectric by laser annealing, an inserted layer, a high-work-function Ni top electrode, and the low-resistivity -FUSI bottom electrode leads to excellent device integrity.