In this paper, we report, for the first time, the observation of n-type and p-type transition on epitaxially grown graphene films by top-gate bias. More importantly, the measured electron and hole mobility on fabricated top-gate graphene field-effect transistors exceeds 1500 cm2/Vs and 3400 cm2/Vs, respectively.
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SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.