Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm<sup>2</sup>/Vs and hole mobility exceeding 3400 cm<sup>2</sup>/Vs

Yanqing Wu; P.D. Ye; M.A. Capano; Tian Shen; Yi Xuan; Yang Sui; Minghao Qi; J.A. Cooper

doi:10.1109/ISDRS.2007.4422514

Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm²/Vs and hole mobility exceeding 3400 cm²/Vs

Yanqing Wu, Ye, P.D., Capano, M.A., Tian Shen, Yi Xuan, Yang Sui, Minghao Qi, Cooper, J.A.

Source

2007 International Semiconductor Device Research Symposium > 1 - 2

Abstract

In this paper, we report, for the first time, the observation of n-type and p-type transition on epitaxially grown graphene films by top-gate bias. More importantly, the measured electron and hole mobility on fabricated top-gate graphene field-effect transistors exceeds 1500 cm²/Vs and 3400 cm²/Vs, respectively.