A framework for accurately determining the device currents in trapezoidal FinFET devices is presented. The analytical formulation also computes the equivalent threshold voltage of an ideal rectangular fin with iso-current characteristics. The approach easily lends itself to the sensitivity analysis of device currents to variations in the geometric parameters.
Financed by the National Centre for Research and Development under grant No. SP/I/1/77065/10 by the strategic scientific research and experimental development program:
SYNAT - “Interdisciplinary System for Interactive Scientific and Scientific-Technical Information”.