Summary form only given. The difficulty of T-shaped quantum wires (T-QWRs) and lasers formed by the cleaved-edge overgrowth (CEO) method, the two-step-growth method combined by in-situ cleavage, with molecular beam epitaxy lies in the growth of high-quality layers on [110] cleaved surfaces We investigated local electronic-states in GaAs T-QWRs and constituent GaAs [110] QWs using high-resolution micro photoluminescence techniques with a solid immersion lens (SIL).