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A method for the extraction of the source-drain series resistance in an Si MOS transistor applicable from liquid helium up to room temperature is proposed. The method relies on the use of a generalised MOSFET parameter extraction function Y(V/sub g/)=(I/sub d//sup 2//g/sub m/)/sup 1/n/ where the exponent n varies between 2 and 3 as the temperature is lowered from 300 to 4.2 K. The source-drain series resistance is obtained for each temperature from the plot of the extrinsic mobility attenuation factor (to the power n-1) as a function of the slope (to the power n) of the Y(V/sub g/) characteristics measured for MOSFETs having various gate lengths.<<ETX>>