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The structure of the 3×3-R30° reconstruction on the (0001) surface of silicon carbide before and after initial oxidation at room temperature was determined with reflection high-energy electron diffraction (RHEED) rocking curves in the one-beam condition and density-functional theory calculations. The structural parameters of the clean surface are in good agreement with previous reports. For the oxidized...
MgO epitaxial growth on a Si(001) surface by ultrahigh-vacuum molecular beam epitaxy was investigated. Epitaxial orientation and crystalline quality were characterized based on the three-dimensional reciprocal map obtained by Weissenberg RHEED. The epitaxial orientation and crystallinity were strongly dependent on the initial condition of the substrate. When MgO was deposited on a clean Si(001) surface...
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