Heteroepitaxial growth of 3C-SiC on Si(001) substrate has been realized by the use of a hot-wall type LPCVD with an alternating supply of acetylene (C 2 H 2 ) and dichlorosilane (SiH 2 Cl 2 ) in the temperature range 1000-1050°C. By synchronizing hydrogen (H 2 ) supply with C 2 H 2 supply, the reduction of SiCl 2 molecules on the surface of the substrate during SiH 2 Cl 2 , supply was suppressed, resulting in the realization of the self-limiting process of SiCl 2 adsorption in the SiC growth process. The growth rate of 3C-SiC was independent of the temperature, the flow rate of the SiH 2 Cl 2 , and the duration of the SiH 2 Cl 2 supply. To suppress the reduction of the SiCl 2 molecules during the SiH 2 Cl 2 supply seems to be a necessary condition to realize layer-by-layer growth of SiC. Since residual C 2 H 2 molecules hinder the SiCl 2 molecules from being adsorbed on the substrate, the C 2 H 2 molecules on the surface of the substrate may give rise to a suppression of SiC growth.