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Physical and Chemical Science Center, Sandia National Laboratories, Albuquerque, NM 87185, USA Department of Materials Science and Engineering, University Michigan, Ann Arbor, MI 48109, USA National Renewable Energy Laboratory, Golden, CO 80401, USA Center for Microanalysis, University of Illinois, Urbana, IL 61801, USAWe present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)m (InAs)n short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent InxAl1−xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the ‘strength’ of the composition modulation wave amplitude.Photoluminescence studiesAlAs/InAs superlatticesSpontaneous lateral composition modulation
Physical and Chemical Science Center, Sandia National Laboratories, Albuquerque, NM 87185, USA Department of Materials Science and Engineering, University Michigan, Ann Arbor, MI 48109, USA National Renewable Energy Laboratory, Golden, CO 80401, USA Center for Microanalysis, University of Illinois, Urbana, IL 61801, USAWe present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)m (InAs)n short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent InxAl1−xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the ‘strength’ of the composition modulation wave amplitude.Photoluminescence studiesAlAs/InAs superlatticesSpontaneous lateral composition modulation
Physical and Chemical Science Center, Sandia National Laboratories, Albuquerque, NM 87185, USA Department of Materials Science and Engineering, University Michigan, Ann Arbor, MI 48109, USA National Renewable Energy Laboratory, Golden, CO 80401, USA Center for Microanalysis, University of Illinois, Urbana, IL 61801, USAWe present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)m (InAs)n short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent InxAl1−xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the ‘strength’ of the composition modulation wave amplitude.Photoluminescence studiesAlAs/InAs superlatticesSpontaneous lateral composition modulation
Physical and Chemical Science Center, Sandia National Laboratories, Albuquerque, NM 87185, USA Department of Materials Science and Engineering, University Michigan, Ann Arbor, MI 48109, USA National Renewable Energy Laboratory, Golden, CO 80401, USA Center for Microanalysis, University of Illinois, Urbana, IL 61801, USAWe present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)m (InAs)n short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain. The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent InxAl1−xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the ‘strength’ of the composition modulation wave amplitude.Photoluminescence studiesAlAs/InAs superlatticesSpontaneous lateral composition modulation